Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi<sub>2</sub>-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

SUNOHARA Tsuyoshi; LI Cheng; OZAWA Yoshinori; SUEMASU Takashi; HASEGAWA Fumio

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J-GLOBAL ID：200902221144102566 Reference number：05A0605999

Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi₂-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

β-FeSi₂粒子/Si多層活性領域を持つSiベース発光ダイオードに関する分子ビームエピタクシーによる成長およびキャラクタリゼーション

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Volume： 44 Issue： 6A Page： 3951-3953 Publication year： Jun. 15, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Light emitting devices , Semiconductor thin films , Luminescence of semiconductors

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Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi₂-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy