Rchr
J-GLOBAL ID：201401016184608598
Update date: Oct. 01, 2022
Kim Kabjin
Kim Kabjin
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Affiliation and department：
Kyoto University
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Papers (34)：
Noriko Matsuzaki, Takahiro Moriyama, Masaki Nagata, Kab-Jin Kim, Ippei Suzuki, Tomoyasu Taniyama, Teruo Ono. Current induced antiferro-ferromagnetic transition in FeRh nanowires. JAPANESE JOURNAL OF APPLIED PHYSICS. 2015. 54. 7. 073002
Takuya Taniguchi, Kab-Jin Kim, Takayuki Tono, Takahiro Moriyama, Yoshinobu Nakatani, Teruo Ono. Precise control of magnetic domain wall displacement by a nanosecond current pulse in Co/Ni nanowires. APPLIED PHYSICS EXPRESS. 2015. 8. 7. 073008
Takuya Taniguchi, Kab-Jin Kim, Takayuki Tono, Sanghoon Kim, Takahiro Moriyama, Teruo Ono. Dimensional crossover characterized by distribution of magnetic domain wall creep velocity. APPLIED PHYSICS EXPRESS. 2015. 8. 7. 073004
Takayuki Tono, Takuya Taniguchi, Kab-Jin Kim, Takahiro Moriyama, Arata Tsukamoto, Teruo Ono. Chiral magnetic domain wall in ferrimagnetic GdFeCo wires. APPLIED PHYSICS EXPRESS. 2015. 8. 7. 073001
Kohei Ueda, Ryo Hiramatsu, Kab-Jin Kim, Takuya Taniguchi, Takayuki Tono, Takahiro Moriyama, Teruo Ono. Temperature dependence of current-induced magnetic domain wall motion in an asymmetric Co/Ni nanowire. JAPANESE JOURNAL OF APPLIED PHYSICS. 2015. 54. 3. 038004
ｍore...
MISC (1)：
S. Fukami, M. Yamanouchi, T. Koyama, K. Ueda, Y. Yoshimura, K. J. Kim, D. Chiba, H. Honjo, N. Sakimura, R. Nebashi, et al. High-speed and reliable domain wall motion device: Material design for embedded memory and logic application. Digest of Technical Papers - Symposium on VLSI Technology. 2012. 61-62
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