• A
  • A
  • A
日本語 Help
Science and technology information site for articles, patents, researchers information, etc.
Rchr
J-GLOBAL ID:201601012444697255   Update date: Feb. 23, 2025

Kobayashi Masaharu

コバヤシ マサハル | Kobayashi Masaharu
Affiliation and department:
Homepage URL  (1): http://nano-lsi.iis.u-tokyo.ac.jp/
Research field  (3): Electrical power engineering ,  Electronic devices and equipment ,  Electronic devices and equipment
Research keywords  (10): First-principles calcuation ,  Oxide semiconductor ,  機械学習 ,  AI ,  Ferroelectric device ,  Integrated Device ,  IoT ,  Low power device ,  Memory device ,  CMOS transistor
Research theme for competitive and other funds  (20):
  • 2024 - 2028 分極反転ダイナミクスの実空間観察に基づく強誘電体薄膜の分極疲労メカニズムの解明
  • 2023 - 2028 三次元集積メモリデバイスに向けたナノシート酸化物半導体
  • 2023 - 2028 最先端原子層プロセス国際共同研究ネットワークの構築
  • 2023 - 2027 リコンフィギュアラブル量子極低温制御回路の創製
  • 2024 - 2027 酸化物半導体が駆動する次世代強誘電体メモリデバイスの大規模集積化に関する研究
Show all
Papers (404):
  • Masaharu Kobayashi. Oxide-based 3D-integrated memory devices. JSAP Review. 2025. 250404
  • 小林正治. 先端半導体デバイス技術の現状と展望. 表面科学技術研究会2025、大阪. 2025
  • 小林正治. 三次元集積デバイス応用に向けたナノスケール酸化物半導体トランジスタの研究報告. 第10回透明酸化物光・電子材料研究会、東京大学. 2025
  • Yuki Itoya, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi. Enhanced reliability of ferroelectric Hf0.5Zr0.5O2 capacitors by bottom electrode surface oxidation. Japanese Journal of Applied Physics. 2025. 62. 2. 02SP29
  • 小林正治. 酸化物材料による3次元集積メモリデバイスの開発. 応用物理. 2025. 94. 1. 32-36
more...
MISC (16):
more...
Patents (11):
  • 不揮発性記憶装置
  • Process variability tolerant hard mask for replacement metal gate finFET devices
  • III-V compound semiconductor material passivation with crystalline interlayer
  • Transistor formation using cold welding
  • Method and structure for compound semiconductor contact
more...
Education (3):
  • 2006 - 2010 Stanford University Electrical Engineering
  • 2004 - 2006 The University of Tokyo Electrical Engineering
  • 2000 - 2004 The University of Tokyo Liberal arts/School of Engineering Electronics and Information Engineering
Professional career (1):
  • 電子工学専攻 (Stanford大学)
Work history (9):
  • 2019/10 - 現在 The University of Tokyo
  • 2014/05 - 現在 The University of Tokyo Institute of Industrial Science Associate Professor
  • 2019/04 - 2019/09 The University of Tokyo VLSI (Very Scale Integration Large) Design and Education Center
  • 2010/02 - 2014/04 IBM corporation Watson Research Center Research Staff Member
  • 2006/09 - 2010/01 Stanford University Ph.D degree
Show all
Committee career (11):
  • 2017/04 - 現在 応用物理学会 プログラム編集委員
  • 2015/04 - 現在 VLSI technology symposium プログラム委員
  • 2018/04 - 2024/03 電気学会 技術調査専門委員会
  • 2014/04 - 2023/03 学振165委員会 幹事
  • 2018/04 - 2022/12 IEEE International Electron Device Meeting (IEDM) サブコミッティー
Show all
Awards (18):
  • 2025/02 - IEEE EDS Japan Joint Chapter IEEE EDS Japan Joint Chapter Student Award Scaling Potential of Nanosheet Oxide Semiconductor FETs for Monolithic 3D Integration -ALD Material Engineering, High-Field Transport, Statistical Variability
  • 2024/03 - 応用物理学会 講演奨励賞 3次元集積デバイス応用に向けた原子層堆積法によるInGaOxチャネルナノシートトランジスタ
  • 2024/02 - IEEE EDS Japan Joint Chapter IEEE EDS Japan Joint Chapter Student Award A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-Off Operation, High Mobility and Reliability for 3D Integrated Devices
  • 2023/12 - IEEE EDS Leo Esaki Award Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model
  • 2022/12 - IEEE EDS IEEE EDS Paul Rappaport Award Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled y Sn-Doped InGaZnO for 3-D Embedded RAM Application
Show all
Association Membership(s) (4):
THE JAPANESE SOCIETY FOR ARTIFICIAL INTELLIGENCE ,  THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN ,  IEEE ,  THE JAPAN SOCIETY OF APPLIED PHYSICS
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page