Ichikawa Shuhei

イチカワシュウヘイ | Ichikawa Shuhei

Affiliation and department：
Job title： Associate Professor
Other affiliations (1)：

Osaka University Research Center for Ultra-High Voltage Electron Microscopy Associate Professor

Homepage URL (2)： http://www.sfm.eei.eng.osaka-u.ac.jp/ , http://www.sfm.eei.eng.osaka-u.ac.jp/en/

Research field (3)： Electric/electronic material engineering , Optical engineering and photonics , Crystal engineering

Research theme for competitive and other funds (15)：

2023 - 2028 New development of Semiconductors Intracenter Photonics
2023 - 2027 Real-time detection of VOC using MoS2 thin film integrated with micro LEDs
2022 - 2024 窒化物光デバイスの高効率化に向けた光電子・発光融合分光分析の創製
2018 - 2023 Development of semiconductors intra-center photonics
2020 - 2023 (継続テーマ) 希土類元素ドープによる高品質GaN系微傾斜表面の作製と高密度原子ステップを利用した高機能デバイスの開発

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Papers (76)：

Shuhei Ichikawa, Yasufumi Fujiwara. Monolithic Integration of GaN-based Full color LEDs using Hybrid System of Intra-center and Inter-band Transitions. Journal of the Japanese Association for Crystal Growth. 2024. 51. 2. 51-2-05/1-51-2-05/9
K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters. 2024. 124. 23
Kenjiro Uesugi, Ryota Akaike, Shuhei Ichikawa, Takao Nakamura, Kazunobu Kojima, Masahiko Tsuchiya, Hideto Miyake. 230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs. Applied Physics Express. 2024
Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN. AIP Advances. 2024
Shuhei Hatanaka, Taro Tsuchiya, Shuhei Ichikawa, Jun Yamasaki, Kazuhisa Sato. Ultrafast dynamics of a photoinduced phase transition in single-crystal trititanium pentoxide. Applied Physics Letters. 2023

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MISC (4)：

Patents (2)：

Lectures and oral presentations (21)：

Ultrafast Surface Carrier Recombination in Semiconductors Evaluated by Two-photon Photoemission Spectroscopy
(2024 Materials Research Society Fall Meeting (2024 MRS Fall Meeting), CH06.07.04, Boston, USA, December 1-6 (2024). 2024)
Design and Fabrication of Circularly Polarized Emitters using Metasurface-integrated InGaN Light Emitting Devices
(Optics & Photonics Japan (OPJ2024), 30pMS2, Chofu, Japan, (Nov. 2024). 2024)
Surface Carrier Dynamics of Nitride Semiconductors Evaluated by Time-resolved Photoemission Spectroscopy
(The 12th International Workshop on Nitride Semiconductors (IWN2024), 386, Hawai’i, USA, November 3-8 (2024). 2024)
Arbitrary control of optical polarization of (0001) InGaN radiation using anisotropic strain-relaxation in micro-LED structures
(The 12th International Workshop on Nitride Semiconductors (IWN2024), 384, Hawai’i, USA, November 3-8 (2024). 2024)
Strong far-UVC localized emissions from Ga-rich regions induced by atomic-step meandering of AlGaN on high-temperature annealed AlN templates
(The 12th International Workshop on Nitride Semiconductors (IWN2024), 391, Hawai’i, USA, November 3-8 (2024). 2024)

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Education (2)：

2012 - 2017 Kyoto University Graduate School of Engineering Department of Electronic Science and Engineering
2008 - 2012 Kyoto University Faculty of Engineering School of Electrical & Electronic Engineering

Professional career (1)：

Work history (5)：

2024/03 - 現在 Osaka University Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering Associate Professor
2022/03 - 2024/02 Osaka University Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering Assistant Professor
2020/09 - 2022/02 Osaka University Research Center for Ultra-High Voltage Electron Microscopy Assistant Professor
2018/04 - 2020/09 Osaka University Assistant Professor
2017/04 - 2018/03 Osaka University Research Center for Ultra-High Voltage Electron Microscopy Specially Appointed Assistant Professor

Committee career (5)：

2019 - 現在 14th International Conference on Nitride Semiconductors Publication Committee
2021/03 - 2023/03 電子材料シンポジウム実行委員会総務委員
2019 - 2019 第38回電子材料シンポジウム(EMS-38) 会場委員
2019 - 2019 日本結晶成長学会(JCCG-48)現地実行委員
2018 - 2018 第37回電子材料シンポジウム(EMS-37) 会場委員

Awards (11)：

2024/04 - the 10th Conference on Light-Emitting Devices and Their Industrial Application (LEDIA 2024) Young Researcher’s Paper Award Combinational integration of Eu-doped GaN and InGaN LEDs and their prospects for miniaturization
2023/03 - The Japan Society of Applied Physics 44th JSAP Outstanding Paper Award Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
2021/03 - CGCT-8 CGCT Young Scientist Award Demonstration of macrostep-free GaN bipolar device structures on vicinal (0001) substrates using Eu-doped GaN interlayers
2019/06 - 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第11回ナノ構造・エピタキシャル成長講演会研究奨励賞高密度原子ステップ表面を有するGaN系半導体におけるSiドーピング時の成長挙動
2019/04 - 日本材料学会半導体エレクトロニクス部門委員会平成30年度講演奨励賞 In-situ Euドーピング技術を利用した微傾斜(0001)GaN表面のステップバンチング抑制

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Association Membership(s) (1)：

The Japan Society of Applied Physics

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