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J-GLOBAL ID：201901012399947190   Update date: Feb. 01, 2024

DONG WANG

DONG WANG
Affiliation and department：
九州大学 総合理工学研究院

About 九州大学 総合理工学研究院


Job title： 准教授
Research field  (3)： Thin-film surfaces and interfaces ,  Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (10)： Border Trap ,  Interface States Density ,  Deep Level Transient Spectroscopy (DLTS) ,  Electroluminescence(EL) ,  Photoluminescence(PL) ,  Ge On Insulator ,  Local Strain ,  Metal/Semiconductor Contact ,  Ge-MOSFET ,  Ge Optical Device
Research theme for competitive and other funds  (6)：
  • 2017 - 2020 Ge-On-Insulator基板上への局所歪み導入によるGe-光素子の高性能化
  • 2014 - 2017 Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices
  • 2013 - 2016 Development of basic technology for achievement of metal source/drain Ge-CMOS device
  • 2011 - 2013 Development of local-strain technology for crystalline Ge and its application to transistors
  • 2009 - 2011 Precise strain evaluation for high-performance bipolar transistor
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Papers (128)：
  • Wei-Chen Wen, Dong Wang, Hiroshi Nakashima, Keisuke Yamamoto. Fabrication and Characterization of Germanium n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator: Formation of underlying Germanium Oxide and Its Electrical Characteristics. Materials Science in Semiconductor Processing. 2023. 162. 1. 107504
  • Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Shigeomi Hishiki, Hiroki Uratani, Yoshiki Sakaida, Keisuke Kawamura. High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature-the importance of Coulomb scattering suppression. Applied Physics Express. 2022. 15. 7. 071008-071008
  • Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima. (Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications. ECS Transactions. 2021. 104. 4. 157-166
  • Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima. (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer. ECS Transactions. 2021. 102. 4. 63-71
  • Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima. Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities. Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. 2020. 33-34
ｍore...
MISC (5)：
Lectures and oral presentations  (24)：
  • Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes
    (TACT 2019 International Thin Film Conference 2019)
  • Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes
    (Collaborative Conference on Materials Research (CCMR) 2018 2018)
  • Towards an energy-saving society - the shrinking transistors
    (CAMPUS Asia EEST 2nd stage Kick-off Symposium 2017)
  • Direct band gap light emission and detection at room temperature in bulk Ge diodes
    (The 2nd Joint Symposium of Kyushu University and Yonsei University 2016)
  • Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes
    (The American Vacuum Society (AVS) 2015 Shanghai Thin Film (TF) Conference 2015)
ｍore...
Education (2)：
  • 1995 - 2000 Jilin University College of Physics, Graduate School Department of Optics
  • 1991 - 1995 Jilin University Department of Physics, Undergraduate School Course of Optics
Work history (8)：
  • 2012/02 - 現在 Kyushu University FES Associate Professor
  • 2008/04 - 2012/01 Kyushu University KASTEC Research Associate Professor
  • 2006/04 - 2008/03 JSPS Postdoctral Fellowship for Overseas Researchers
  • 2004/04 - 2006/03 Kyushu University KASTEC Research Fellow
  • 2002/04 - 2004/03 Fukuoka IST Research Fellow
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Association Membership(s) (1)：
THE JAPAN SOCIETY OF APPLIED PHYSICS
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