Mitsuaki Kaneko

カネコミツアキ | Mitsuaki Kaneko

Affiliation and department：
Job title：助教
Homepage URL (1)： http://semicon.kuee.kyoto-u.ac.jp/

Research field (1)： Electric/electronic material engineering

Research keywords (4)： silicon carbide , crystal growth , electron devices , Wide bandgap semiconductor

Research theme for competitive and other funds (5)：

2021 - 2026 Materials Science and Device Physics in SiC toward Robust Electronics
2021 - 2024 Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature range
2021 - 2022 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
2019 - 2021 厳環境動作SiCハイブリッド集積回路の開発
2014 - 2017 窒化アルミニウムガリウム超格子のコヒーレント成長機構解明とデバイス応用基礎

Papers (44)：

Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto. High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces. IEEE Electron Device Letters. 2024. 45. 7. 1113-1116
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC. Japanese Journal of Applied Physics. 2024. 63. 6. 061003-061003
Mitsuaki Kaneko, Taiga Matsuoka, Tsunenobu Kimoto. High electron mobility in heavily sulfur-doped 4H-SiC. Journal of Applied Physics. 2024. 135. 20. 205702
Kotaro Kuwahara, Takeaki Kitawaki, Masahiro Hara, Mitsuaki Kaneko, Tsunenobu Kimoto. Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process. Japanese Journal of Applied Physics. 2024. 63. 5. 050903-050903
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Generation of deep levels near the 4H-SiC surface by thermal oxidation. Applied Physics Express. 2024. 17. 4. 041004-041004

ｍore...

MISC (4)：

Patents (4)：

Lectures and oral presentations (31)：

SiC JFETを用いた厳環境動作相補型論理回路
(半導体エレクトロニクス部門委員会第2回研究会ナノ材料部門委員会第3回研究会 2023)
350 ̊C operation of SiC complementary JFET logic gates
(12th IEEE CPMT Symposium Japan (ICSJ2023) 2023)
Physics and Performance Improvement of SiC MOSFETs
(2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology 2023)
SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [IEEE EDL]
(The 23rd Kansai Colloquium Electron Devices Workshop 2023)
Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC
(20th International Conference on Silicon Carbide and Related Materials (ICSCRM2023) 2023)

ｍore...

Education (2)：

2012 - 2016 Kyoto University Graduate School of Engineering Electronic Science and Engineering
2008 - 2012 Kyoto University Faculty of Engineering Electrical and electronic engineering

Professional career (1)：

Work history (5)：

2019/01 - 現在 Kyoto University Assistant Professor
2017/12 - 2018/12 ETH Zurich JSPS Overseas Research Fellow
2017/04 - 2017/12 Kyoto University
2016/10 - 2017/03 Kyoto University Research Fellow of Japan Society for the Promotion of Science
2014/04 - 2016/09 Kyoto University Research Fellow of Japan Society for the Promotion of Science

Committee career (5)：

2024/04 - 現在 The Japan Society of Applied Physics, The Advanced Power Semiconductors Division Member
2020/04 - 2024/03 The Japan Society of Applied Physics, The Advanced Power Semiconductors Division Treasurer [Permanent Member]
2023/03 - 2023/10 第42回EMS 会場委員
2022/03 - 2022/10 第41回EMS 会場委員
2019/01 - 2019/10 ICSCRM 2019組織委員

Awards (8)：

2023/10 - IEEE EDS Kansai Chapter The 23rd IEEE EDS Kansai Chapter of the Year Award SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,” IEEE Electron Device Lett., 43, 997 (2022)
2023/09 - ICSCRM2023 program comittee The John Palmour Best Student Paper Award Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC
2023/06 - The Foundation of ANDO Laboratory Ando Incentive Prize for the Study of Electronics
2020/04 - 公益財団法人船井情報科学振興財団(FFIT) 船井研究奨励賞界面不整転位導入による歪み制御窒化アルミニウム結晶の成長と物性解明
2015/09 - 第62回応用物理学会春季学術講演会第38回応用物理学会講演奨励賞

Show all

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page