Mitsuaki Kaneko

カネコミツアキ | Mitsuaki Kaneko

Affiliation and department：
Job title：助教
Homepage URL (1)： http://semicon.kuee.kyoto-u.ac.jp/

Research field (1)： Electric/electronic material engineering

Research keywords (4)： silicon carbide , crystal growth , electron devices , Wide bandgap semiconductor

Research theme for competitive and other funds (5)：

2021 - 2026 Materials Science and Device Physics in SiC toward Robust Electronics
2021 - 2024 Logic threshold voltage stabilization in silicon carbide integrated circuits within a wide temperature range
2021 - 2022 学理に基づく高品質SiC/酸化膜界面の形成とロバストデバイスへの展開
2019 - 2021 厳環境動作SiCハイブリッド集積回路の開発
2014 - 2017 窒化アルミニウムガリウム超格子のコヒーレント成長機構解明とデバイス応用基礎

Papers (50)：

Takeaki Kitawaki, Xilun Chi, Mitsuaki Kaneko, Tsunenobu Kimoto. Impact ionization coefficients along 4H-SiC 〈 11 2 ̄ 0 〉 in a wide temperature range. Japanese Journal of Applied Physics. 2024. 63. 11. 118004-118004
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC. Japanese Journal of Applied Physics. 2024. 63. 11. 118002-118002
T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda. An Overview of SiC High-Voltage Power Devices and High-Temperature ICs. 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). 2024. 88-94
Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC. Journal of Applied Physics. 2024. 136. 9. 095702-095702
Shion Toshimitsu, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects. Japanese Journal of Applied Physics. 2024. 63. 9. 090905-090905

ｍore...

MISC (4)：

Patents (4)：

Lectures and oral presentations (37)：

SiC High-Voltage Power Devices and High-Temperature Ics
(2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium 2024)
Tunneling Phenomena and Ohmic Contact Formation at Non-Alloyed Metal/Heavily-Doped SiC Interfaces
(Pacific Rim Meeting of Electrochemical and Solid State Science 2024 2024)
Impacts of Anisotropic Material Properties on Performance of SiC Power Devices
(Pacific Rim Meeting of Electrochemical and Solid State Science 2024 2024)
Doping-dependent fixed charges in SiC MOSFETs
(21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024) 2024)
Mobility enhancement in SiC n- and p-channel MOSFETs
(21st International Conference on Silicon Carbide and Related Materials (ICSCRM2024) 2024)

ｍore...

Education (2)：

2012 - 2016 Kyoto University Graduate School of Engineering Electronic Science and Engineering
2008 - 2012 Kyoto University Faculty of Engineering Electrical and electronic engineering

Professional career (1)：

Work history (5)：

2019/01 - 現在 Kyoto University Assistant Professor
2017/12 - 2018/12 ETH Zurich JSPS Overseas Research Fellow
2017/04 - 2017/12 Kyoto University
2016/10 - 2017/03 Kyoto University Research Fellow of Japan Society for the Promotion of Science
2014/04 - 2016/09 Kyoto University Research Fellow of Japan Society for the Promotion of Science

Committee career (5)：

2024/04 - 現在 The Japan Society of Applied Physics, The Advanced Power Semiconductors Division Member
2020/04 - 2024/03 The Japan Society of Applied Physics, The Advanced Power Semiconductors Division Treasurer [Permanent Member]
2023/03 - 2023/10 第42回EMS 会場委員
2022/03 - 2022/10 第41回EMS 会場委員
2019/01 - 2019/10 ICSCRM 2019組織委員

Awards (10)：

2024/11 - エヌエフ基金第13回エヌエフ基金研究開発奨励賞炭化ケイ素半導体を用いた厳環境動作可能な相補型回路の提案と動作実証
2024/10 - ICSCRM2024 program comittee The John Palmour Best Student Paper Award Doping-dependent fixed charges in SiC MOSFETs
2023/10 - IEEE EDS Kansai Chapter The 23rd IEEE EDS Kansai Chapter of the Year Award SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,” IEEE Electron Device Lett., 43, 997 (2022)
2023/09 - ICSCRM2023 program comittee The John Palmour Best Student Paper Award Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC
2023/06 - The Foundation of ANDO Laboratory Ando Incentive Prize for the Study of Electronics

Show all

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page