Rchr
J-GLOBAL ID:201901020754209611   Update date: Aug. 31, 2024

Saito Wataru

サイトウ ワタル | Saito Wataru
Affiliation and department:
Homepage URL  (1): https://www.riam.kyushu-u.ac.jp/ece/SAITO_group/index.html
Research field  (1): Electronic devices and equipment
Research keywords  (3): Power Device Control ,  Power Modules ,  Power Semiconductor Devices
Research theme for competitive and other funds  (1):
  • 2019 - 2021 A new low-voltage power MOSFET structure and control to break through theoretical limit for high efficiency electric vehicle
Papers (111):
  • Toshiaki Inuma, Dibo Zhang, Katsuhiro Hata, Kazuto Mikami, Kenji Hatori, Koji Tanaka, Wataru Saito, Makoto Takamiya. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target. 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). 2024
  • Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito. Mechanism of gate voltage spike under digital gate control at IGBT switching operations. Power Electronic Devices and Components. 2024. 7. 100054-100054
  • Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shin-Ichi Nishizawa, Wataru Saito. Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN). IEEE Access. 2024. 12. 96936-96945
  • Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping. IEEE Open Journal of Power Electronics. 2024. 5. 392-401
  • Taro Takamori, Keiji Wada, Wataru Saito, Shin-ichi Nishizawa. Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker. Microelectronics Reliability. 2023. 150. 115119-115119
more...
MISC (4):
Patents (82):
  • 半導体装置
  • 半導体装置
  • 半導体装置
  • 半導体装置
  • 窒化物半導体素子
more...
Books (4):
  • 次世代パワー半導体デバイス・実装技術の基礎
    科学技術情報出版 2021
  • 技術総合誌[オーム]OHM
    2018
  • パワーデバイス
    丸善 2011
  • 電気工学ハンドブック(第7版)
    電気学会
Lectures and oral presentations  (99):
  • Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker
    (34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
  • A simple sensor device for power cycle degradation sensing
    (34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
  • Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module
    (34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2023)
  • Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method
    (2023 International Conference on Solid State Devices and Materials (SSDM) 2023)
  • Study on Stress in Trench Structures during Silicon IGBTs Process - Oxidation
    (2023 International Conference on Solid State Devices and Materials (SSDM) 2023)
more...
Education (3):
  • 1996 - 1999 Tokyo Institute of Technology
  • 1994 - 1996 Tokyo Institute of Technology
  • 1992 - 1994 Tokyo Institute of Technology
Professional career (1):
  • 博士(工学) (東京工業大学)
Work history (3):
  • 2019/08 - 現在 The University of Tokyo Institute of Industrial Science Research Fellow
  • 2019/04 - 現在 Kyushu University Research Institute for Applied Mechanics Professor
  • 1999/04 - 2019/03 Toshiba Electronic Devices & Storage Corporation
Committee career (20):
  • 2019/11 - 現在 IEEE Transaction on Electron Devices Editorial Board
  • 2018/06 - 現在 電子情報通信学会 電子デバイス研究会
  • 2017/04 - 現在 電気学会 電子デバイス技術委員会
  • 2010/12 - 現在 電子情報通信学会 Technical Workshop on Heterostructure Microelectronics (TWHM) プログラム委員会
  • 2020/04 - 2021/12 IEEE IEDM Power Device and Systems (PDS) sub-committee
Show all
Association Membership(s) (5):
NPERC-J ,  IEEE ,  THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN
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