Rchr

J-GLOBAL ID：200901001948614043 Update date: Oct. 20, 2024

Fujiwara Yasufumi

フジワラヤスフミ | Fujiwara Yasufumi

Affiliation and department：

Research field (3)： Electric/electronic material engineering , Crystal engineering , Applied materials

Research keywords (4)：電子・電気材料工学 , 応用物性・結晶工学 , Electronic and Electric Materials Engineering , Applied Physics of Property and Crystallography

Research theme for competitive and other funds (55)：

2023 - 2028 New development of Semiconductors Intracenter Photonics
2024 - 2027 Commercialization of rare-earth-doped GaN LEDs for innovative micro-LED displays
2018 - 2023 Development of semiconductors intra-center photonics
2017 - 2019 Cell-photon engineering with ultra-narrow-band LEDs
2017 - 2019 Photon-field control of luminescent function of rare-earth ions in semiconductors

2016 - 2018 Development of highly efficient wavelength-conversion materials for next-generation solar cells using rare-earth ions doped in semiconductors

2014 - 2017 Approaches to 10 times intensification of rare-earth doped materials: Identification of luminescence quenching factors using microwave absorption properties

2012 - 2017 Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors

2014 - 2016 Development of quantum informative function using rare-earth ions doped well-controllably in semiconductors

2012 - 2013 赤色発光を示す希土類添加窒化物半導体におけるエネルギー輸送機構の解明

2011 - 2012 Development of terahertz emitters and detectors using rare-earth-doped semiconductors

2007 - 2011 Development of Properties and Functionalities by Precise Control of Rare-Earth Doping

2006 - 2010 Reproducible growth technique for GaInNAs and its application to long-wavelength laser diodes

2008 - 2008 Development of advanced luminescent functionality by control of atomic configuration in rare-earth doped semiconductors

2007 - 2008 希土類添加半導体の秩序制御と高次発光機能の発現

2007 - 2008 希土類添加半導体を基盤とした光ナノ共振器の作製と発光特性の評価

2006 - 2007 希土類添加半導体の励起・緩和機構の解明と波長超安定発光デバイス高性能化への応用

2005 - 2006 希土類添加半導体の秩序制御と高次発光機能の発現

2005 - 2006 Siベース発光デバイス用材料:β-FeSi2単結晶の作製とホモエピタキシャル成長

2004 - 2006 Development of laser terahertz emission microscope and its application to LSI defect analysis

2004 - 2005 希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現

2003 - 2005 Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors

2003 - 2004 希土類元素添加半導体における電流励起光学利得とその最適化

2003 - 2003 希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現

2002 - 2003 Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement

2001 - 2003 Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O

2001 - 2003 Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality

2001 - 2002 高輝度フルカラーディスプレイ用希土類添加窒化物半導体のエピタキシャル成長と物性

1999 - 2001 Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures

1999 - 1999 III-V族化合物半導体における希土類原子配置による局在スピンの制御と物件

1998 - 1999 室温動作2〜3μm帯半導体レーザ用材料:Dy添加III-V族半導体の作製と発光特性

1997 - 1999 CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH

1998 - 1998 単一量子ドットの形成とそのナノ光学物性に関する研究

1998 - 1998 III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性

1997 - 1997 III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性

1996 - 1997 ATOMIC-LAYER CONTROLLED SUPER-HETEROEPITAXY AND PROPERTIES OF LANTHANOIDE/SEMICONDUCTOR STRUCTURES

1995 - 1997 DEVELOPMENT OF FABRICATION SYSTEM FOR NEW QUANTUM FUNCTIONAL MATERIALS OF SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES

1995 - 1996 RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMS

1995 - 1995 異種結合界面を有する新機能量子材料の原子層制御スーパーヘテロエピタキシャル成長

1994 - 1994 III-V族化合物半導体へのDy原子層ド-ピングと室温動作2〜3μm帯レーザへの応用

1992 - 1994 RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES

1993 - 1993 蛍光EXAFSによる成長素過程のその場測定と原子レベルミクロ構造の制御

1991 - 1991 原子層エピタキシャル法によるダイヤモンド/窒化ボロン超格子構造の作製と特性評価

1990 - 1990 高温超伝導体ヘテロエピタキシの表面・界面評価と光電応用

1990 - 1990 GaAs薄膜のナノ秒エキシマレーザ励起原子層選択エッチングと「その場」特性評価

1989 - 1989 高温超電導体ヘテロエピタキシの表面・界面評価と光電応用

1988 - 1989 Study of Non-equilibrium Superconductivity in HTSC and Electronic Application

1987 - 1988 Development Research of Radiant FIR Emitter Employing Two-Dimensional Plasmon in Hetero-Junction

1987 - 1987 2次元電子プラズモン輻射測定による超格子ヘテロ界面の非破壊評価

1986 - 1986 超格子化合物半導体内のプラズモン・フォノン結合スペクトルの研究

1985 - 1986 Superconductor-Base Transistor Employing Superconductor-Semiconductor Junctions

量子機能材料の光電物性評価とデバイス応用

原子層制御ヘテロエピタキシャル法による新しい量子機能材料の作製

Characterization of Quantum-Functional Materials and Their Application to Electronic Devices

Atomic-Layer Controlled Heteroepitaxy of New Quantum-Functional Materials

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Papers (376)：

Tomoaki Nambu, Masashi YOSHIMURA, Yusuke Mori, Yasufumi FUJIWARA, Ryota Ishii, Yoichi KAWAKAMI, Masahiro Uemukai, Tomoyuki TANIKAWA, Ryuji KATAYAMA. 199 nm vacuum-ultraviolet second harmonic generation from SrB₄O₇ vertical microcavity pumped with picosecond laser. Applied Physics Express. 2024
Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN. AIP Advances. 2024. 14. 2
Fumikazu Murakami, Atsushi Takeo, Brandon Mitchell, Volkmar Dierolf, Yasufumi Fujiwara, Masayoshi Tonouchi. Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy. Communications Materials. 2023. 4. 100
Zhidong Fang, Jun Tatebayashi, Ryohei Homi, Masayuki Ogawa, Hirotake Kajii, Masahiko Kondow, Kyoko Kitamura, Brandon Mitchell, Shuhei Ichikawa, Yasufumi Fujiwara. Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs. Optics Continuum. 2023. 2. 10. 2178-2178
Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Fabrication of polarity inverted LiNbO₃/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion. Japanese Journal of Applied Physics. 2023. 62. 10. 102001-102001

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MISC (157)：

加藤昌稔, 山田晋也, 山田晋也, 市川修平, 小林周平, 山田道洋, 山田道洋, 内藤貴大, 舘林潤, 藤原康文, et al. Spin transport in GaN using ferromagnetic Heusler alloy/n⁺-GaN Schottky tunnel contacts. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
山田晋也, 山田晋也, 本多遼成, 後藤優貴, 市川修平, 舘林潤, 藤原康文, 藤原康文, 浜屋宏平, 浜屋宏平. GaN(0001)上へのハーフメタルホイスラー合金Co₂FeSi薄膜の低温MBE成長. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2019. 80th
Realization of red resonant cavity LEDs with an Eu-doped GaN active layer. 2017. 117. 332. 45-48
児島貴徳, 櫻木寛至, 小川雅之, 藤岡夏輝, 藤原康文. GaAs中にドープされたEr発光中心とフォトニック結晶光ナノ共振器との相互作用 (レーザ・量子エレクトロニクス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 116. 389. 9-12
Characterization of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink. 2016. 26. 263-266

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Patents (13)：

希土類添加半導体素子とその製造方法
窒化物半導体基板とその製造方法および半導体デバイス
希土類添加窒化物半導体素子とその製造方法、半導体LED、半導体レーザー
AlInN膜および2次元フォトニック結晶共振器とこれらの製造方法ならびに半導体発光素子
近赤外発光半導体素子とその製造方法

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Books (23)：

"Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications 2003
"ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy"
EPR in the 21st Century: Basics and Applications to Material, Life and Earth Sciences 2002
"Organometallic vapor phase and droplet heteroepitaxy of quantum structur"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Growth condition dependences of optical properties of Er in InP and local structures"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Formation of InGaAs Dots on InP Substrate with Lattice-Matching Growth Condition by Droplet Heteroepitaxy"
Institute of Physics Conference Series 1999

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Lectures and oral presentations (8)：

Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities
(Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials 2020)
Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication
(2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2020)
Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
(Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan. 2006)
Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited Talk]
(Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42. 2006)
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600°C)
(Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095. 2006)

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Works (5)：

希土類元素添加半導体を基盤とした波長超安定新規発光デバイスの高性能化
2004 -
原子レベル制御による新規量子機能材料の創製
2004 -
希土類添加III-V族半導体を用いた波長超安定発光デバイスの開発
2004 -
希土類元素添加半導体における電流励起光学利得とその最適化
2004 -
希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現
2004 -

Education (3)：

1983 - 1985 Osaka University Graduate School of Engineering Sciencel
1981 - 1983 Osaka University
1977 - 1981 Osaka University School of Engineering Science Direct Affiliates

Professional career (1)：

Dr. Engineering (Osaka University)

Work history (19)：

2024/04 - 現在 Osaka University Professor Emeritus
2024/04 - 現在 Osaka University The R3 Insitute of Newly-Emerging Science and Design Specially Appointed Professor
2024/04 - 現在 Osaka University The Institute of Scientific and Industrial Research Specially Appointed Professor
2024/04 - 現在 Ritsumeikan University Research Organization of Science and Technology Professor
2022/04 - 2024/03 Osaka University R3 Institute of Newly-Emerging Science Design Director

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Committee career (5)：

2020/03 - 2022/03 Japan Society of Applied Physics Vice President
2009 - (社)日本金属学会セミナー・シンポジウム委員会委員
2008 - (社)日本材料学会学会将来構想WGメンバー
2007 - (社)日本金属学会分科会委員会委員
2004 - Japanese Journal of Applied Physics 編集委員

Awards (18)：

2023/03 - The Japan Society of Applied Physics The 44th Best Paper Award of The Japan Society of Applied Physics Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut
2021/12 - International Display Workshop 2021 (IDW'21) Best Paper Award Eu-Doped GaN-Based Red LEDs as a Key Technology for Micro-LED Displays with Ultrahigh Resolution
2021/11 - 国立大学法人大阪大学大阪大学賞(教育貢献部門) 工学分野でのASEANキャンパスを活用した双方向ハイブリッド型教育プログラム推進
2021/01 - 電気化学会蛍光体同学会蛍光体賞次世代マイクロLEDディスプレイに資するEu添加GaN赤色発光ダイオードの高輝度化とRGB集積化
2020/04 - 文部科学省文部科学大臣表彰科学技術賞(研究部門) 半導体イントラセンターフォトニクスの開発

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Association Membership(s) (5)：

The Society of Materials Science, Japan , The Japan Institute of Metals and Materials , The Japanese Society of Applied Physics , The Rare Earth Society of Japan , The Laser Society of Japan

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