Shiraishi Tadashi

シライシタダシ | Shiraishi Tadashi

Affiliation and department：
Job title： Others

Research field (2)： Electronic devices and equipment , Electric/electronic material engineering

Research keywords (4)：薄膜 , 結晶成長 , Thin films , Crystal Growth

Research theme for competitive and other funds (2)：

MISC (24)：

Isomerization effect in a-Si:H. Journal of Advanced Science. 2001. Vol.12、No.3, 206-209
Crystal Growth of AlN on AlN/Sapphire Interdegital Transducer at the Resonance Point of nitrogen-Electron Cyclotron plasma. IPAP Conf. Series the Institute of Pure and Applied Physics. 2001. 1 190-193
Crystal Growth of AlN on AlN/Sapphire Interdigital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma. IPAP Conf. Series. The Institute of Pure and Applied Physics. 2001. 1. 190-193
Isomerization effect in a-SiiH. Journal of Advanced Science Society of Advanced Science. 2001. 12. 3. 206-209
T Inushima, T Ashino, K Murano, T Shiraishi, VY Davydov, S Ohoya. Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma. JOURNAL OF CRYSTAL GROWTH. 2000. 209. 2-3. 406-409

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Books (1)：

Professional career (1)：

Work history (6)：

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Committee career (3)：

Association Membership(s) (5)：

SAS , 先端科学技術協会 , 応用物理学会 , 応用物理 , 電子情報通信

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