Rchr
J-GLOBAL ID：200901007608066910
Update date: Sep. 15, 2022
Narita Yuzuru
ナリタ ユズル | Narita Yuzuru
Affiliation and department：
旧所属 長岡技術科学大学 工学研究科 材料工学専攻
About 旧所属 長岡技術科学大学 工学研究科 材料工学専攻
Search "旧所属 長岡技術科学大学 工学研究科 材料工学専攻"
Job title：
大学院学生(博士課程)
Research field (2)：
Electric/electronic material engineering
, Thin-film surfaces and interfaces
Research keywords (4)：
半導体材料
, 半導体表面・界面
, Semiconductor Material
, Semiconductor surface and interface
Research theme for competitive and other funds (2)：
走査プローブ顕微鏡及び反射高速電子線回折を用いた半導体初期成長過程の観察
Observation of initial growth processes of semiconductor using scarring probe microscopy and reflection high energy electron diffraction.
MISC (10)：
Y Narita, T Inubushi, M Harashima, K Yasui, T Akahane. Initial stage of 3C-SiC growth on Si(001)-2 x 1 surface using monomethylsilane. APPLIED SURFACE SCIENCE. 2003. 216. 1-4. 575-579
Y Narita, T Inubushi, K Yasui, T Akahane. Si c(4 x 4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(001) using monomethylsilane and dimethylsilane. APPLIED SURFACE SCIENCE. 2003. 212. 730-734
Y Narita, T Inubushi, K Yasui, T Akahane. Si c(4 x 4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(001) using monomethylsilane and dimethylsilane. APPLIED SURFACE SCIENCE. 2003. 212. 730-734
Initial stage of 3C-SiC growth on Si(001)-2x1 surface using monomethylsilane. Applied Surface Science. 2003. 216 pp.575-579
In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilane. Journal of Crystal Growth. 2002. 237-239 pp.1254-1259
ｍore...
Education (4)：
- 2001 Nagaoka University of Technology
- 2001 Nagaoka University of Technology Graduate School, Division of Engineering
- 1999 Nagaoka University of Technology Faculty of Engineering
- 1999 Nagaoka University of Technology Faculty of Engineering
Professional career (1)：
(BLANK) (Nagaoka University of Technology)
Association Membership(s) (2)：
日本表面科学会
, 応用物理学会
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