Initial stage of 3C-SiC growth on Si(001)-2 × 1 surface using monomethylsilane

NARITA Y; INUBUSHI T; HARASHIMA M; YASUI K; AKAHANE T

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J-GLOBAL ID：200902215009063577 Reference number：03A0506074

Initial stage of 3C-SiC growth on Si(001)-2 × 1 surface using monomethylsilane

モノメチルシランを用いたSi(001)-2×1表面上の3C-SiC成長の初期段階

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Author (5)： , , , ,
Material：
Volume： 216 Issue： 1/4 Page： 575-579 Publication year： Jun. 30, 2003
JST Material Number： B0707B ISSN： 0169-4332 Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films

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