Research theme for competitive and other funds (6):
2004 - nanodevice
2004 - ナノデバイス
2002 - 2002 semiconductor
2002 - 2002 半導体
Calculation of Properties by ab-initio method
第一原理計算による材料物性評価
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Papers (61):
Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya. Room-Temperature Possible Current-Induced Transition in Ca2RuO4 Thin Films Grown Through Intercalation-Like Cation Diffusion in the A2BO4 Ruddlesden-Popper Structure. Small Methods. 2024
Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: b-SrGe2O5. ACS Appl. Electron. Mater. 2019. 1. 1989-1993
Low Temperature Oxidation of Si Using Novel Ceramic Atomic Oxygen Source
(The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3) 2009)
What have been clarified for amorphous oxide semiconductors?
(IDMC窶「3DSA窶「Asia Display'09 2009)
Amorphous oxide semiconductor: Factors determining TFT performance and stability
(9th Int. Meeting on Inf. Display (IMID2009) 2009)
Defects and doping in amorphous oxide semiconductor studied by first-principles calculations
(Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics 2009)
Electronic structures of defects and impurities in layered mixed anion compounds
(Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics 2009)