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J-GLOBAL ID：200901020415152700   Update date: Sep. 27, 2024

Nagashio Kosuke

ナガシオ コウスケ | Nagashio Kosuke
Affiliation and department：
東京大学 大学院工学系研究科 マテリアル工学専攻

About 東京大学 大学院工学系研究科 マテリアル工学専攻


Job title： 教授
Homepage URL  (2)： http://webpark1753.sakura.ne.jp/nagashio_lab/ ,  http://webpark1753.sakura.ne.jp/nagashio_lab_E/
Research field  (5)： Electric/electronic material engineering ,  Metals and resources production ,  Inorganic materials ,  Nano/micro-systems ,  Nanomaterials
Research keywords  (6)： 電子輸送特性 ,  ナノカーボン ,  凝固・結晶成長 ,  layered materials ,  crystal growth ,  2D devices
Research theme for competitive and other funds  (27)：
  • 2022 - 2027 Integration of 2 dimensional tunnel FET for ultra-low power consumption system
  • 2021 - 2026 Development of Electronic, Photonic, and Energy Applications with 2.5 Dimensional Structures
  • 2021 - 2026 General Management of Innovative Area of 2.5 Dimensional Materials Science
  • 2022 - 2026 2D材料CMOS・デバイス集積化技術の開発
  • 2022 - 2025 Proposal of integratable two dimensional tunnel FET structure and demonstration of its ultra-low power operation
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Papers (215)：
  • Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata. Transport properties of multilayer NbxMo1-xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate. Applied Physics Letters. 2024
  • Tomohiro Fukui, Tomonori Nishimura, Yasumitsu Miyata, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Single-Gate MoS<sub>2</sub> Tunnel FET with a Thickness-Modulated Homojunction. ACS Applied Materials & Interfaces. 2024. 16. 7. 8993-9001
  • N. Fang, Y. R. Chang, D. Yamashita, S. Fujii, M. Maruyama, Y. Gao, C. F. Fong, K. Otsuka, K. Nagashio, S. Okada, et al. Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes. Nature Communications. 2023. 14. 1
  • Yih-Ren Chang, Ryo Nanae, Satsuki Kitamura, Tomonori Nishimura, Haonan Wang, Yubei Xiang, Keisuke Shinokita, Kazunari Matsuda, Takashi Taniguchi, Kenji Watanabe, et al. Shift Current Photovoltaics based on A Noncentrosymmetric Phase in in-plane Ferroelectric SnS. Advanced Materials. 2023
  • Hiroto Ogura, Seiya Kawasaki, Zheng Liu, Takahiko Endo, Mina Maruyama, Yanlin Gao, Yusuke Nakanishi, Hong En Lim, Kazuhiro Yanagi, Toshifumi Irisawa, et al. Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS Nano. 2023
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MISC (84)：
  • Kosuke Nagashio. Understanding interface properties in 2D heterostructure FETs. Semiconductor Science and Technology. 2020. 35. 10
  • 米盛樹生, DUTTA Sudipta, 長汐晃輔, 若林克法. Theoretical Study on Raman Active Modes of SnS Thin Films. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
  • 永村直佳, 永村直佳, 吹留博一, 長汐晃輔, 尾嶋正治. Interface dipole layer observation in graphene field effect transistors by synchrotron soft X-ray operando spectromicroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
  • NAGASHIO Kosuke. Control of the interface properties in a 2D layered heterostructure FET. Oyo Buturi. 2020. 89. 3. 139-146
  • 川元颯巳, 東垂水直樹, 中村優, 若林克法, 長汐晃輔. 出発材料比較による高品質SnS薄膜の作製. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
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Books (2)：
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
Lectures and oral presentations  (109)：
  • “Understanding interface properties in 2D heterostructure FETs”,
    (MRS spring meeting 2020, (April, 13-17, Phenix, AZ, USA). 2020)
  • “Room temperature ferroelectricity in monolayer SnS”,
    (“Room temperature ferroelectricity in monolayer SnS”, 4th International Workshop on 2D Materials 2020, (Feb., 26-28, Yonsei University, Seoul, Korea). 2020)
  • ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”
    (Materials Research Meeting 2019 2019)
  • ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”
    (Materials Research Meeting 2019 2019)
  • Ferroelectricity in monolayer SnS
    (JSPS/EPSRC C2C meeting 2019)
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Education (3)：
  • 1999 - 2002 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1997 - 1999 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1993 - 1997 Kyoto University Faculty of Engineering
Professional career (1)：
  • Ph.D (The University of Tokyo)
Work history (6)：
  • 2020/06 - 現在 Professor, Department of Materials Engineering, The University of Tokyo
  • 2011/04 - 2020/05 Associate Professor, Department of Materials Engineering, The University of Tokyo
  • 2007/09 - 2011/03 Lecturer, Department of Materials Engineering, The University of Tokyo
  • 2003/10 - 2007/08 Japan Aerospace Exploration Agency Research Associate
  • 2002/04 - 2003/09 Postdoctoral Fellow for Research Abroad of JSPS, Stanford university
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Association Membership(s) (5)：
フラーレンナノチューブグラフェン学会 ,  IERR EDS ,  Materials Research Society ,  応用物理学会 ,  日本金属学会
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