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J-GLOBAL ID:200901020415152700   Update date: May. 22, 2020

Nagashio Kosuke

ナガシオ コウスケ | Nagashio Kosuke
Homepage URL  (2): http://webpark1753.sakura.ne.jp/nagashio_lab/http://webpark1753.sakura.ne.jp/nagashio_lab_E/
Research field  (5): Electric/electronic material engineering ,  Metals and resources production ,  Inorganic materials ,  Nano/micro-systems ,  Nanomaterials
Research keywords  (3): layered materials ,  crystal growth ,  2D devices
Research theme for competitive and other funds  (18):
  • 2018 - 2022 Tailor-made synthesis and future development of graphene
  • 2019 - 2021 Demonstration of piezoelectric properties of novel 2D materials toward energy harvesting
  • 2016 - 2019 Universal gate stack for 2D layered channel
  • 2015 - 2019 International supports of atomic layered materials and promoting the collaborated research
  • 2016 - 2018 Direct growth of graphene on h-BN using the Cu vapor
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Papers (172):
  • Nan Fang, Kosuke Nagashio. Quantum-mechanical effect in atomically thin MoS2 FET. 2D MATERIALS. 2020. 7. 1
  • Nagamura Naoka, Fukidome Hirokazu, Nagashio Kosuke, Horiba Koji, Ide Takayuki, Funakubo Kazutoshi, Tashima Keiichiro, Toriumi Akira, Suemitsu Maki, Horn Karsten, Oshima Masaharu. Influence of interface dipole layers on the performance of graphene field effect transistors. CARBON. 2019. 152. 680-687
  • Fang Nan, Toyoda Satoshi, Taniguchi Takashi, Watanabe Kenji, Nagashio Kosuke. Full Energy Spectra of Interface State Densities for n- and p-type MoS2 Field-Effect Transistors. ADVANCED FUNCTIONAL MATERIALS. 2019. 29. 49
  • Tomonori Nishimura, Xuan Luo, Soshi Matsumoto, Takeaki Yajima, Akira Toriumi. Almost pinning-free bismuth/Ge and/Si interfaces. AIP ADVANCES. 2019. 9. 9
  • Asakura Eito, Suzuki Masaki, Karube Shutaro, Nitta Junsaku, Nagashio Kosuke, Kohda Makoto. Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS2. APPLIED PHYSICS EXPRESS. 2019. 12. 6
more...
MISC (65):
  • NAGASHIO Kosuke. Control of the interface properties in a 2D layered heterostructure FET. Oyo Buturi. 2020. 89. 3. 139-146
  • NAGASHIO Kosuke. Gate stack formation for 2D layered electronics. Abstract of annual meeting of the Surface Science of Japan. 2017. 37. 0. 54-54
  • Li Xiuyan, Yajima Takeaki, Nishimura Tomonori, Nagashio Kosuke, Toriumi Akira. Analytical formulation of interfacial SiO_2 scavenging in HfO_2/SiO_2/Si stacks. Technical report of IEICE. SDM. 2015. 114. 421. 1-4
  • Mori Yutaro, Minamitani Emi, Yasunobu Ando, Kasamatsu Shuusuke, Kanayama Kaoru, Nagashio Kosuke, Watanabe Satoshi. Analysis of capacitance in bilayer graphene device by first-principles calculation. Abstract of annual meeting of the Surface Science of Japan. 2015. 35. 0
  • Mori Y., Minamitani E., Ando Yasunobu, Kasamatsu Shusuke, Kanayama Kaoru, Nagashio Kosuke, Watanabe Satoshi. 21pPSB-54 Analysis of capacitance of bilayer graphene device by theoretical calculation. Meeting Abstracts of the Physical Society of Japan. 2015. 70. 0. 2580-2580
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Lectures and oral presentations  (59):
  • “Understanding interface properties in 2D heterostructure FETs”,
    (MRS spring meeting 2020, (April, 13-17, Phenix, AZ, USA). 2020)
  • “Room temperature ferroelectricity in monolayer SnS”,
    (“Room temperature ferroelectricity in monolayer SnS”, 4th International Workshop on 2D Materials 2020, (Feb., 26-28, Yonsei University, Seoul, Korea). 2020)
  • ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”
    (Materials Research Meeting 2019 2019)
  • ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”
    (Materials Research Meeting 2019 2019)
  • Ferroelectricity in monolayer SnS
    (JSPS/EPSRC C2C meeting 2019)
more...
Education (4):
  • - 2002 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
  • - 1999 The University of Tokyo Graduate School, Division of Engineering Department of Materials Engineering
  • - 1997 Kyoto University Faculty of Engineering
  • - 1997 Kyoto University Faculty of Engineering
Professional career (1):
  • Ph.D (The University of Tokyo)
Work history (4):
  • 2011/04 - 現在 Associate Professor, Department of Materials Engineering, The University of Tokyo
  • 2007/09 - 2011/03 Lecturer, Department of Materials Engineering, The University of Tokyo
  • 2003/10 - 2007/08 JAXA
  • 2002/04 - 2003/09 Postdoctoral Fellow for Research Abroad of JSPS, Stanford university
Association Membership(s) (3):
フラーレンナノチューブグラフェン学会 ,  IERR EDS ,  Materials Research Society
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