Rchr
J-GLOBAL ID:200901020415152700
Update date: Jan. 14, 2023
Nagashio Kosuke
ナガシオ コウスケ | Nagashio Kosuke
Affiliation and department:
Job title:
教授
Homepage URL (2):
http://webpark1753.sakura.ne.jp/nagashio_lab/
,
http://webpark1753.sakura.ne.jp/nagashio_lab_E/
Research field (5):
Electric/electronic material engineering
, Metals and resources production
, Inorganic materials
, Nano/micro-systems
, Nanomaterials
Research keywords (6):
電子輸送特性
, ナノカーボン
, 凝固・結晶成長
, layered materials
, crystal growth
, 2D devices
Research theme for competitive and other funds (22):
- 2019 - 2022 2Dヘテロ界面特性の理解に基づく2DトンネルFETの構築
- 2018 - 2022 Tailor-made synthesis and future development of graphene
- 2019 - 2021 Demonstration of piezoelectric properties of novel 2D materials toward energy harvesting
- 2016 - 2019 Universal gate stack for 2D layered channel
- 2015 - 2019 International supports of atomic layered materials and promoting the collaborated research
- 2016 - 2018 Direct growth of graphene on h-BN using the Cu vapor
- 2015 - 2018 Synthesis and device applications of AB-stacked bilayer graphene
- 2013 - 2018 Promotion of Science Atomic layers
- 2013 - 2018 Understanding and device application of the hetero-atomic layers
- 2014 - 2016 Improvement of current gain for graphene-base hot electron transistors
- 2012 - 2015 Current injection at the graphene/metal interface with the large difference in DOSs
- 2012 - 2014 Improvement of mobility for CVD graphene by removing catalytic metal
- 2009 - 2010 Increase in off current of bilayer graphene by band gap engineering caused by external electrostatic field
- 2007 - 2009 Magnetic Property of Undercooled Co Alloy Melt
- 2006 - 2008 赤外線カメラを用いたメルトスピンによる急速凝固過程の解明
- 2006 - 2008 Manufacturing Process of Axisymmetric Teardrop Crystal of Si for Solar-cell
- 2007 - electric transport of graphene FET and its application for H2 sensor
- 2005 - 2006 準安定相の生成・分解を利用したNd-Fe-Bナノコンポジット磁石の創成
- 2004 - 2006 Heat and Mass Transport in Undercooled Melts of Germanium and Silicon
- 2004 - 2005 大過冷を利用した新しい非線形光学材料創成プロセスの提案
- 2003 - 2005 Near-net Shape Casting of Rare-earth Iron Magnet from Undercooled Melt
- 1997 - Non-equilibrium solidification processing
Show all
Papers (201):
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Wataru Nishiyama, Tomonori Nishimura, Masao Nishioka, Keiji Ueno, Satoshi Iwamoto, Kosuke Nagashio. Is the Bandgap of Bulk PdSe 2 Located Truly in the Far-Infrared Region? Determination by Fourier-Transform Photocurrent Spectroscopy. Advanced Photonics Research. 2022. 3. 11. 2200231-2200231
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Hiroki Ago, Susumu Okada, Yasumitsu Miyata, Kazunari Matsuda, Mikito Koshino, Kosei Ueno, Kosuke Nagashio. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. Science and Technology of Advanced Materials. 2022
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Masaya Umeda, Naoki Higashitarumizu, Ryo Kitaura, Tomonori Nishimura, Kosuke Nagashio. Identification of the position of piezoelectric polarization at the MoS2/metal interface. APPLIED PHYSICS EXPRESS. 2021. 14. 12
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Itsuki Yonemori, Sudipta Dutta, Kosuke Nagashio, Katsunori Wakabayashi. Thickness-dependent Raman active modes of SnS thin films. AIP Advances. 2021
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Yih-Ren Chang, Tomonori Nishimura, Kosuke Nagashio. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 36. 43282-43289
more...
MISC (79):
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永村直佳, 永村直佳, 吹留博一, 長汐晃輔, 尾嶋正治. Interface dipole layer observation in graphene field effect transistors by synchrotron soft X-ray operando spectromicroscopy. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
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NAGASHIO Kosuke. Control of the interface properties in a 2D layered heterostructure FET. Oyo Buturi. 2020. 89. 3. 139-146
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NAGASHIO Kosuke. Gate stack formation for 2D layered electronics. Abstract of annual meeting of the Surface Science of Japan. 2017. 37. 0. 54-54
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Li Xiuyan, Yajima Takeaki, Nishimura Tomonori, Nagashio Kosuke, Toriumi Akira. Analytical formulation of interfacial SiO_2 scavenging in HfO_2/SiO_2/Si stacks. Technical report of IEICE. SDM. 2015. 114. 421. 1-4
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Mori Yutaro, Minamitani Emi, Yasunobu Ando, Kasamatsu Shuusuke, Kanayama Kaoru, Nagashio Kosuke, Watanabe Satoshi. Analysis of capacitance in bilayer graphene device by first-principles calculation. Abstract of annual meeting of the Surface Science of Japan. 2015. 35. 0. 275-275
more...
Books (2):
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グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
エヌ・ティー・エス 2020 ISBN:9784860436636
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グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
エヌ・ティー・エス 2020 ISBN:9784860436636
Lectures and oral presentations (109):
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“Understanding interface properties in 2D heterostructure FETs”,
(MRS spring meeting 2020, (April, 13-17, Phenix, AZ, USA). 2020)
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“Room temperature ferroelectricity in monolayer SnS”,
(“Room temperature ferroelectricity in monolayer SnS”, 4th International Workshop on 2D Materials 2020, (Feb., 26-28, Yonsei University, Seoul, Korea). 2020)
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”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”
(Materials Research Meeting 2019 2019)
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”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”
(Materials Research Meeting 2019 2019)
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Ferroelectricity in monolayer SnS
(JSPS/EPSRC C2C meeting 2019)
more...
Education (3):
- 1999 - 2002 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
- 1997 - 1999 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
- 1993 - 1997 Kyoto University Faculty of Engineering
Professional career (1):
- Ph.D (The University of Tokyo)
Work history (6):
Association Membership(s) (5):
フラーレンナノチューブグラフェン学会
, IERR EDS
, Materials Research Society
, 応用物理学会
, 日本金属学会
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