Rchr
J-GLOBAL ID:200901020415152700   Update date: Jan. 14, 2023

Nagashio Kosuke

ナガシオ コウスケ | Nagashio Kosuke
Affiliation and department:
Job title: 教授
Homepage URL  (2): http://webpark1753.sakura.ne.jp/nagashio_lab/http://webpark1753.sakura.ne.jp/nagashio_lab_E/
Research field  (5): Electric/electronic material engineering ,  Metals and resources production ,  Inorganic materials ,  Nano/micro-systems ,  Nanomaterials
Research keywords  (6): 電子輸送特性 ,  ナノカーボン ,  凝固・結晶成長 ,  layered materials ,  crystal growth ,  2D devices
Research theme for competitive and other funds  (22):
  • 2019 - 2022 2Dヘテロ界面特性の理解に基づく2DトンネルFETの構築
  • 2018 - 2022 Tailor-made synthesis and future development of graphene
  • 2019 - 2021 Demonstration of piezoelectric properties of novel 2D materials toward energy harvesting
  • 2016 - 2019 Universal gate stack for 2D layered channel
  • 2015 - 2019 International supports of atomic layered materials and promoting the collaborated research
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Papers (201):
  • Wataru Nishiyama, Tomonori Nishimura, Masao Nishioka, Keiji Ueno, Satoshi Iwamoto, Kosuke Nagashio. Is the Bandgap of Bulk PdSe 2 Located Truly in the Far-Infrared Region? Determination by Fourier-Transform Photocurrent Spectroscopy. Advanced Photonics Research. 2022. 3. 11. 2200231-2200231
  • Hiroki Ago, Susumu Okada, Yasumitsu Miyata, Kazunari Matsuda, Mikito Koshino, Kosei Ueno, Kosuke Nagashio. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. Science and Technology of Advanced Materials. 2022
  • Masaya Umeda, Naoki Higashitarumizu, Ryo Kitaura, Tomonori Nishimura, Kosuke Nagashio. Identification of the position of piezoelectric polarization at the MoS2/metal interface. APPLIED PHYSICS EXPRESS. 2021. 14. 12
  • Itsuki Yonemori, Sudipta Dutta, Kosuke Nagashio, Katsunori Wakabayashi. Thickness-dependent Raman active modes of SnS thin films. AIP Advances. 2021
  • Yih-Ren Chang, Tomonori Nishimura, Kosuke Nagashio. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES. 2021. 13. 36. 43282-43289
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MISC (79):
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Books (2):
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
  • グラフェンから広がる二次元物質の新技術と応用 : 世界の動向、CVD合成、転写積層、量子物性、センサ・デバイス、THz応用
    エヌ・ティー・エス 2020 ISBN:9784860436636
Lectures and oral presentations  (109):
  • “Understanding interface properties in 2D heterostructure FETs”,
    (MRS spring meeting 2020, (April, 13-17, Phenix, AZ, USA). 2020)
  • “Room temperature ferroelectricity in monolayer SnS”,
    (“Room temperature ferroelectricity in monolayer SnS”, 4th International Workshop on 2D Materials 2020, (Feb., 26-28, Yonsei University, Seoul, Korea). 2020)
  • ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”
    (Materials Research Meeting 2019 2019)
  • ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”
    (Materials Research Meeting 2019 2019)
  • Ferroelectricity in monolayer SnS
    (JSPS/EPSRC C2C meeting 2019)
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Education (3):
  • 1999 - 2002 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1997 - 1999 The University of Tokyo The Graduate School of Engineering Department of Materials Engineering
  • 1993 - 1997 Kyoto University Faculty of Engineering
Professional career (1):
  • Ph.D (The University of Tokyo)
Work history (6):
  • 2020/06 - 現在 Professor, Department of Materials Engineering, The University of Tokyo
  • 2011/04 - 2020/05 Associate Professor, Department of Materials Engineering, The University of Tokyo
  • 2007/09 - 2011/03 Lecturer, Department of Materials Engineering, The University of Tokyo
  • 2003/10 - 2007/08 Japan Aerospace Exploration Agency Research Associate
  • 2002/04 - 2003/09 Postdoctoral Fellow for Research Abroad of JSPS, Stanford university
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Association Membership(s) (5):
フラーレンナノチューブグラフェン学会 ,  IERR EDS ,  Materials Research Society ,  応用物理学会 ,  日本金属学会
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