Rchr
J-GLOBAL ID:200901022517625339
Update date: Jul. 17, 2024
Yoshida Haruhiko
ヨシダ ハルヒコ | Yoshida Haruhiko
Affiliation and department:
Research field (3):
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (3):
半導体デバイス
, 電子物性
, Physics of Electronics
Research theme for competitive and other funds (10):
- 2018 - 2021 シリコンナノワイヤ表面を用いたシリコン系太陽電池の高効率化に関する研究
- 2015 - 2019 低コスト・拡散系太陽電池におけるキャリア再結合に関する研究
- 2014 - 2017 Investigation of Sr-silicate layer as field effect passivation film for Si solar cell
- 2009 - 2015 界面局所制御による光・キャリアの完全利用
- 2008 - 2009 半導体のナノ評価に向けた走査型過渡容量顕微鏡の開発
- 2005 - 2007 Investigation of high-k gate insulator and its interface property by contactless capacitance transient spectroscopy
- 1999 - 2004 ナノメータ・デバイス対応のSOIウェーハに対する極限評価技術の開発
- 2001 - 2003 Development of Scanning Capacitance Transient Spectroscopy and Characterization of Ultrathin Oxide/Silicon Interface
- 1998 - 2000 Correlation between carrier lifetime and interface trap density in MOS devices
- 1995 - 1997 Study on the formation mechanism of long-distance proximity effect
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Papers (57):
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Hidenobu Mori, Haruhiko Yoshida. Temperature Dependence of Oxygen Annealing Effect on Electrical Properties of GaOx/Si Structure by Mist Chemical Vapor Deposition. 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2023
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Hidenobu Mori, Haruhiko Yoshida. Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method. 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2022
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Yasushi Hotta, Ryoichi Nemoto, Keisuke Muranushi, Yujun Zhang, Hiroki Wadati, Keita Muraoka, Hiroshi Sakanaga, Haruhiko Yoshida, Koji Arafune, Hitoshi Tabata. Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions. Applied Physics Letters. 2022. 120. 23. 232106-232106
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Arafune, K., Kitano, S., Yoshida, H., Ogura, A., Hotta, Y. Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate. Japanese Journal of Applied Physics. 2019. 58. 12
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Hidenobu Mori, Haruhiko Yoshida. Microscopic Imaging of Inversion Layer Formation in Insulator/Semiconductor Structure by Scanning Capacitance Transient Microscopy. 2018 IEEE International Meeting for Future of Electron Devices, Kansai. 2018
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MISC (90):
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森 英喜, 吉田 晴彦. CaMn1-xMoxO3の熱電特性評価. 第71回応用物理学会春季学術講演会. 2024
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森英喜, 吉田晴彦. 不純物添加による金属酸化物の熱電特性向上. 兵庫県立大学 知の交流シンポジウム2022. 2022. 45
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赤枝美里, 森英喜, 吉田晴彦. BiまたはNbをドープした不定比酸化カルシウムマンガンの熱電特性. 応用物理学会秋季学術講演会講演予稿集(CD-ROM) 69th. 2022
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村主圭佑, 和達大樹, 新船幸二, 吉田晴彦, 堀田育志. Capacitance-voltage characteristics of (La1-xSrx)VO3/p-Si(100) junctions. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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赤枝美里, 森英喜, 吉田晴彦. Thermoelectric Properties in Nonstoichimetric Manganese Calcium Oxide. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Lectures and oral presentations (44):
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BiまたはNbをドープした不定比酸化カルシウムマンガンの熱電特性
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 69th 2022)
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Thermoelectric Properties in Nonstoichimetric Manganese Calcium Oxide
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2021)
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Capacitance-voltage characteristics of (La<sub>1-x</sub>Sr<sub>x</sub>)VO<sub>3</sub>/p-Si(100) junctions
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2021)
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Al/金属酸化物/HfO<sub>2</sub>/Si構造の金属酸化物が抵抗スイッチングに与える影響
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2020)
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(La<sub>1-x</sub>Sr<sub>x</sub>)VO<sub>3</sub>/p-Si(100)接合の順方向電流-電圧特性の温度依存性
(応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2020)
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Education (4):
- - 1994 Himeji Institute of Technology
- - 1994 Himeji Institute of Technology Graduate School, Division of Engineering
- - 1989 Himeji Institute of Technology
- - 1989 Himeji Institute of Technology Faculty of Engineering
Professional career (1):
Work history (6):
Association Membership(s) (2):
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