Rchr

J-GLOBAL ID：200901035376389320 Update date: Aug. 17, 2022

Higuchi Hisayuki

ヒグチヒサユキ | Higuchi Hisayuki

Affiliation and department：

Research field (1)： Electronic devices and equipment

Research keywords (4)：集積回路 , 電子デバイス , Integrated Circuit , Electronic Device

Research theme for competitive and other funds (2)：

情報処理用電子デバイス・回路の(]G0048[)性能化
Improvement of Electronics Devices and Circuits for Information Systems

MISC (22)：

A 2-ns-Access, 285-MHz, Two-Port Cache Macro Using Double Global Bit-Line Pairs. ITICE Transactions on Electronics. 2000. E83-C(1), 109-114
しきい値電圧を出力信号で制御する高速・低消費電力SOI-CMOS回路. 電子情報通信学会論文誌C. 2000. J83-C. 6. 487-494
A 2-ns-Access, 285-MHz, Two-Port Cache Macro Using Double Global Bit-Line Pairs. ITICE Transactions on Electronics. 2000. E83-C(1), 109-114
HIGUCHI Hisayuki, IKEDA Takahide. A High-Speed, Low-Power SOI CMOS Circuit with Variable Threshold Voltage. The Transactions of Institute of Electronics, Informatin and Communication Engineers C. 2000. J83-C. 6. 487-494
Analog circuit Design Methodology in a Low Power RISC Microprocessor. IEICE Transaction on Fundamentals of Electronics, communications and computer sciences. 1998. E81-A. 2. 210

ｍore...

Books (2)：

超(]G0048[)速バイポーラデバイス(共著)
培風館 1985
High-Speed Bipolar Devices
1985

Education (2)：

- 1962 Tohoku University Faculty of Engineering
- 1962 Tohoku University Faculty of Engineering

Professional career (1)：

(BLANK)

Association Membership(s) (4)：

The Electrochemical Society , 応用物理学会 , 電気学会 , 電子情報通信学会

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