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J-GLOBAL ID:200901038197167454   Update date: May. 18, 2020

Fujiwara Kenzo

フジワラ ケンゾウ | Fujiwara Kenzo
Research field  (4): Electric/electronic material engineering ,  Optical engineering and photonics ,  Crystal engineering ,  Applied materials
Research keywords  (13): Optical nonlinear devices ,  Optical bistability ,  Optical switching ,  Quantum effect devices ,  Resonant tunneling ,  Stark effects ,  Exciton resonance absorption ,  Optoelectronics ,  Quantum wells ,  Semiconductor superlattices ,  Photoconductive phenomena ,  Quantum capture ,  Quantum well light emitting diodes
Research theme for competitive and other funds  (3):
  • 1992 - 2010 Study of semiconductor quantum materials and physics
  • 1992 - 2010 Study of ultrafast optoelectronics and measurements in semiconductor superlattices
  • 1992 - 2010 Study of quantum phenomena of semiconductor ultrathin films and their applications to novel functional devices
MISC (122):
  • Transfer time for perpendicular transport of photoexcited carriers in step-graded multiple quantum wells(jointly worked). SPIE Symposium on Integrated Optoelectronic Devices 2008, San Jose Convention Center in San Jose, CA, USA, January 19-24 (2008) (6892-64). 2008
  • Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum-well diodes(jointly worked). SPIE Symposium on Integrated Optoelectronic Devices 2008, San Jose Convention Center in San Jose, CA, USA, January 19-24 (2008) (6894-64). 2008
  • Asymmetric External Field Effects on Photoluminescence Efficiency in a Blue (In,Ga)N Quantum-Well Diode with an Additional n-type Electron Reservoir Layer(jointly worked). International Workshop on Nitride Semiconductors, Montreux, Switzerland, Octorber 6-10, 2008 (We5-P7). 2008
  • Temperature-Dependent Droop of Electroluminescence Efficiency in Blue (In,Ga)N Quantum-Well Diodes(jointly worked). , International Workshop on Nitride Semiconductors, Montreux, Switzerland, Octorber 6-10, 2008 (Th6-F6). 2008
  • Enhanced droop of electroluminescence efficiency at low temperatures in blue (In,Ga)N quantum well diodes (jointly worked). The 15th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL8), Lyon, France, 7-11 July, 2008 (We-P-171). 2008
more...
Books (1):
  • Semiconductor Superlattices : Growth and Electronic Properties(jointly worked)
    Semiconductor Superlattices(共著) World Scientific 1995
Works (9):
  • Study of light emission efficiency of blue light emitting diodes
    2002 - 2011
  • High emission mechanisms of III-nitride light emitting diodes
    2002 - 2011
  • Optoelectronics of Semiconductir superlattices
    1992 - 2011
  • Optical properties of strained quantum well heterostructures
    1999 - 2010
  • Origins of High Efficiency in Blue and Green InGaN Light-Enatting Biode
    1999 -
more...
Professional career (1):
  • (BLANK) (Osaka University)
Work history (3):
  • 1972 - 1991 Mitsubishi Electric Corp. Central Res. Lab., researcher
  • 1983 - 1984 Max-Planck-Institut f(]E88DB[)r Festk(]E88D8[)rper forschung, Visiting scientist
  • Kyushu Institute of Technology Faculty of Engineering, Department of Electrical Engineering and Electronics, Faculty of Engineering Department of Electrical Engineering and Electronics Professor
Committee career (6):
  • 2009 - Applied Physics Letters Referee
  • 2008 - Journal of Selected Topics of Quantum Electronics Referee
  • 2008 - Japanese Journal of Applied Physics Referee
  • 2008 - Applied Physics Letters Referee
  • 2008 - Applied Physics Letters Referee
Show all
Association Membership(s) (4):
Journal of Selected Topics of Quantum Electronics ,  Japanese Journal of Applied Physics ,  Applied Physics Letters ,  Journal of Applied Physics
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