Rchr
J-GLOBAL ID：200901061474847427
Update date: Nov. 19, 2003
Shibata Tomohiko
シバタ トモヒコ | Shibata Tomohiko
Affiliation and department：
旧所属 三重大学 大学院工学研究科 材料科学専攻
About 旧所属 三重大学 大学院工学研究科 材料科学専攻
Search "旧所属 三重大学 大学院工学研究科 材料科学専攻"
Job title：
大学院学生(博士課程)
Research field (1)：
Electric/electronic material engineering
Research keywords (2)：
電気電子工学
, Electrical Electronic Engineering
Research theme for competitive and other funds (2)：
MOVPE法による窒化物半導体エピタキシャル成長と欠陥制御
Epitaxial growth and defect control of (]G0003[)-(]G0005[) nitrides using MOVPE
MISC (13)：
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth. Compound Semiconductors 2001 (Inst. Phys. Conf. Ser. No. 170) 795. 2002
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth. Compound Semiconductors 2001 (Inst. Phys. Conf. Ser. No. 170) 795. 2002
AlN Epitaxial Growth on Off-Angle R-Plane Sapphire Substrates by MOCVD. Journal of Crystal Growth Vol. 229 (2001) 63. 2001
AlN Epitaxial Growth on Off-Angle R-Plane Sapphire Substrates by MOCVD. J. Cryst. Growth. 2001. 229. 63-68
Surface Acoustic Wave Filters at 2.4GHz using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD. IPAP Conf. Series Vol. 1, (2000) 981. 2000
ｍore...
Education (4)：
- 1992 Kyoto University
- 1992 Kyoto University Graduate School, Division of Natural Science
- 1990 Kyoto University Faculty of Science
- 1990 Kyoto University Faculty of Science
Professional career (1)：
master's degree (Kyoto University)
Association Membership(s) (2)：
Materials Research Society
, 日本応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
