Research field (4)：
Electric/electronic material engineering
, Thin-film surfaces and interfaces
, Applied plasma science
, Basic plasma science
Research keywords (6)：
plasma
, semiconductor
, defects
, hydrogen
, solar cells
, passivation
Research theme for competitive and other funds (8)：
2024 - 2029 Integration Study of General Principles of Thin Film Formation by Plasma Processes.
2023 - 2026 Plasma annealing for defect passivation in semiconductor materials
2020 - 2024 Mechanism elucidation of spatio-temporal structure formation of sheath fluctuation using optically trapped fine particles in plasmas
2018 - 2021 Hydrogen-mediated defect passivation of semiconductor materials during plasma processing
2015 - 2018 Generation and annihilation mechanisms of plasma-induced defects on semiconductor surface
2012 - 2015 Transport properties and defect kinetics during silicon thin film growth
2002 - 2005 微粒子プラズマ中の波動と物質創製に関する研究
1996 - 1999 プラズマ中における微粒子の輸送過程
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Papers (80)：
Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori. SiO2 etch-damage mitigation in fluorocarbon C4F8 plasma: CFx polymer deposition and polyatomic ion effects. Applied Surface Science. 2025
Shota Nunomura, Kunihiro Kamataki, Masaharu Shiratani. Onset of surface modification of silicon by argon plasma processing. Applied Surface Science. 2025
Shota Nunomura, Takayoshi Tsutsumi, Kunihiro Kamataki, Ryuji Oshima, Masaharu Shiratani, Masaru Hori. SiO2/Si stack’s damage in plasma processing: Ar, O2, and H2 gas species effect on damage formation, structure, and recovery. Surfaces and Interfaces. 2025
Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori. Recovery of plasma-induced defects in SiO2/Si stack: defect activation and hydrogen’s effects. Applied Physics Express. 2025
Shota Nunomura, Takayoshi Tsutsumi, Masaru Hori. SiO2/Si interface oxidation and defects in O2 plasma processing. Applied Physics Express. 2025
