Research field (2)：
Electronic devices and equipment
, Electric/electronic material engineering
Research theme for competitive and other funds (4)：
2021 - 2025 Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETs
2020 - 2025 ワイドギャップ半導体MOS界面欠陥の正体の横断的解明
2017 - 2020 Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfaces
2013 - 2016 Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
Papers (134)：
Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls. IEEE Electron Device Letters. 2024
Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Takeshi Tawara, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth. IEEJ Transactions on Electronics, Information and Systems. 2024. 144. 3. 257-262
Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda. Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs. Applied Physics Letters. 2022
Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. APPLIED PHYSICS LETTERS. 2021. 119. 7
平井悠久, 三浦喜直, 中島昭, 原田信介, 山口浩. Crystal face dependence of channel characteristics of GaN UMOS subjected to TMAH treatment. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
Miura Yoshinao, Hirai Hirohisa, Nakajima Akira, Harada Shinsuke. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer. IEEE Conference Proceedings. 2021. 2021. ISPSD
Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers. 2018
