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J-GLOBAL ID:200901080608911814   Update date: Mar. 23, 2019

MIYAMOTO Tomoyuki

ミヤモト トモユキ | MIYAMOTO Tomoyuki
Affiliation and department:
Job title: Associate Professor
Homepage URL  (1): http://vcsel-www.pi.titech.ac.jp/
Research field  (2): Applied materials ,  Electron device/Electronic equipment
Research keywords  (4): Optical wireless power transmission ,  Optics devices ,  Solid-state devices ,  Optical communication systems and equipment
Research theme for competitive and other funds  (2):
  • Study on Surface Emitting Lasers
  • III-V semiconductor epitaxy
MISC (117):
  • "Tomoyuki Miyamoto, Sshigeki Makino, Yoshihiko Ikenaga, Masataka Ohota, Fumio Koyama". Wavelength elongation of GaInNAs lasers beyond 1.3μm. Proc. IEE. 2003. 150. 1. 59-63
  • "Tomoyuki Miyamoto, Takeo Kageyama, Shigeki Makino, Dietmar Schlenker, Fumio Koyama, Kenichi Iga". CBE and MOCVD growth of GaInNAs. J. Crystal Growth. 2000. 209. 2/3. 339-344
  • Tomoyuki Miyamoto. Recent progress and hot technologies of vertical-cavity surface emitting lasers. 2009. 37. 9. 649-656
  • "Tomoyuki Sengoku, Ryoichiro Suzuki, Kosuke Nemoto, Satoru Tanabe, Fumio Koyama, Tomoyuki Miyamoto". Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 2009. 48. 70203. 1-3
  • "Yuta Sugawara, Tomoyuki Miyamoto". Laterally intermixed quantum structure for carrier confinement in vertical-cavity surface-emitting lasers. Electron. Lett. 2009. 45. 3. 167-168
more...
Lectures and oral presentations  (360):
  • CBE法による高成長速度時におけるGaInAs/InP多重量子井戸の成長
    (第51回応用物理学会学術講演会 1990)
  • CBE法によるGaInAs(P)/InP多層膜反射鏡の成長
    (第51回応用物理学会学術講演会 1990)
  • Ultra-thin Ga<sub><small>x</small></sub>In<sub><small>1-x</small></sub>As/InP (0<x<0.47) layer growth by chemical beam epitaxy
    (3rd Int. Conf. on Indium Phosphide and Related Materials 1991)
  • PL study on structure dependence of Ga<sub><small>x</small></sub>In<sub><small>1-x</small></sub>As/InP strained multi-quantum wells grown by CBE
    (23th Int. Conf. on Solid State Devices and Materials 1991)
  • Photoluminescence characterization of Ga<sub><small>x</small></sub>In<sub><small>1-x</small></sub>As (0<x<0.32) strained quantum wells grown on InP by chemical beam epitaxy
    (3rd Int. Conf. on Chemical Beam Epitaxy and Related Growth Techniques 1991)
more...
Education (1):
  • - 1996 Tokyo Institute of Technology Graduate School, Division of Integrated Science and Engineering Department of Information Processing
Professional career (2):
  • Doctor of Engineering (Tokyo Institute of Technology)
  • Master of Engineering (Tokyo Institute of Technology)
Work history (4):
  • 1996 - 1998 Tokyo Institute of Technology Precision and Intelligence Laboratory Research Assistant
  • 1998 - 2000 Tokyo Institute of Technology Research Center for Quantum Effect Electronics Lecturer
  • 2004 - 2006 Ministry of Education, Culture, Sports, Science, and Technology (MEXT) Office for Materials Research and Development, Basic and Generic Research Division, Research Promotion Bureau Scientific Research Senior Specialist
  • 2000 - Tokyo Institute of Technology Precision and Intelligence Laboratory Associate Professor
Awards (1):
  • 2001 - The 8th Microoptics Conference (MOC) Paper Award
Association Membership(s) (3):
JSAP ,  IEICE ,  IEEE/Photonics Society
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