Rchr

J-GLOBAL ID：200901083638947367 Update date: Aug. 08, 2024

Sawa Akihito

サワアキヒト | Sawa Akihito

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=A25475677

Research field (2)： Electric/electronic material engineering , Electrical power engineering

Research theme for competitive and other funds (1)：

強相関電子技術に関する研究

Papers (1)：

S. Kosaka, H. Obara, A. Sawa. Magnetization properties and vortex states of YBa2Cu3Oy/PrBa2Cu3Oy multilayered films. Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory. 1994. 58. 6. 164-165

MISC (34)：

A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Interface resistance switching at a few nanometer thick perovskite manganite active layers. APPLIED PHYSICS LETTERS. 2006. 88. 23. 232112-1-232112-3
Y. Tokunaga, Y. Kaneko, J. P. He, T. Arima, A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces. APPLIED PHYSICS LETTERS. 2006. 88. 22. 223507-
Y. Tokunaga, Y. Kaneko, J. P. He, T. Arima, A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces. APPLIED PHYSICS LETTERS. 2006. 88. 22. 223507-1-223507-3
遷移金属酸化物による抵抗変化型不揮発性メモリー(ReRAM). 応用物理. 2006
SAWA Akihito, FUJII Takeshi, KAWASAKI Masashi, TOKURA Yoshinori. Resistance Switching Memory of Perovskite-Oxide Heterojunctions. Technical report of IEICE. SDM. 2005. 105. 155. 23-26

ｍore...

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page

TOP

BOTTOM