Research field (5)：
Electronic devices and equipment
, Electric/electronic material engineering
, Optical engineering and photonics
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (13)：
2022 - 2025 Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device
2021 - 2024 Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods
2018 - 2021 Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties
2017 - 2020 Quantum state measurements of single photon sources in silicon carbide devices
2015 - 2019 Development of an extreme environment resistive CCD using silicon carbide
2012 - 2015 Generation and control of quantum correlated photons from atomic-layer doped semiconductors
2012 - 2015 Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors
2009 - 2011 Single Photon Generation from locally doped semiconductors
2005 - 2006 Study on single photon emission utilizing isoelectronic traps
2005 - 2006 テラヘルツ反射分光法による炭化珪素半導体の電気的特性の非破壊マッピング測定
2001 - 2002 Characterization of the Interfaces between IV-IV Semiconductors and Ultra-Thin Oxide films
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Papers (111)：
Yasuto Hijikata, Shota Komori, Shunsuke Otojima, Yu-Ichiro Matsushita, Takeshi Ohshima. Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces. Applied Physics Letters. 2021. 118. 20
Takuma Narahara, Shin-Ichiro Sato, Kazutoshi Kojima, Yasuto Hijikata, Takeshi Ohshima. Influences of hydrogen ion irradiation on NcVsi- formation in 4H-silicon carbide. Applied Physics Express. 2021. 14. 2
Yuichi Yamazaki, Yoji Chiba, Shin-Ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Kazutoshi Kojima, Yasuto Hijikata, Hidekazu Tsuchida, Norihiro Hoshino, et al. Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations. Applied Physics Letters. 2021. 118. 2
Shin-Ichiro Sato, Takuma Narahara, Shinobu Onoda, Yuichi Yamazaki, Yasuto Hijikata, Brant C. Gibson, Andrew D. Greentree, Takeshi Ohshima. Near infrared photoluminescence of ncvsi-centers in high-purity semi-insulating 4h-sic irradiated with energetic charged particles. Materials Science Forum. 2020. 1004. 355-360
Yoji Chiba, Yuichi Yamazaki, Shin-Ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Takeshi Ohshima. Enhancement of ODMR contrasts of silicon vacancy in SiC by thermal treatment. Materials Science Forum. 2020. 1004. 337-342
1996 - 1999 Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering
Work history (3)：
2006/04 - 現在 Saitama University Graduate School of Science and Engineering Associate Professor
2005/09 - 2006/03 CNR IMM Guest Researcher
1999/10 - 2006/03 Saitama University Faculty of Engineering Assistant Professor
Committee career (2)：
2019/01 - 現在 Japan Society of Applied Physics Representative
2010/04 - 現在 Japan Society of Applied Physics, Advanced Power Semiconductors Division Member
Awards (1)：
2019/03 - Japan Society of Applied Physics 13th Poster Award Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen
