Rchr
J-GLOBAL ID：200901090626309485
Update date: Jan. 30, 2024
Tanaka Yasunori
タナカ ヤスノリ | Tanaka Yasunori
Affiliation and department：
Job title：
Deputy Director
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=Y72950186
Research field (2)：
Inorganic materials
, Semiconductors, optical and atomic physics
Research theme for competitive and other funds (4)：
- 2015 - 2018 Pulse power application of SiC power devices with ultra-low loss and high switching speed
- 2012 - 2015 A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance
- 2009 - 2011 Improvement in th e reli ability of super low power loss SiC static induction devices
- 2006 - 2008 Research on the maximum performance of silicon carbide static induction devices
Papers (61)：
-
Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho. Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy. APPLIED PHYSICS LETTERS. 2017. 111. 6
-
T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata. Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers. Superlattices and Microstructures. 2016. 99. 197-201
-
N. Chinone, R. Kosugi, Y. Tanaka, S. Harada, H. Okumura, Y. Cho. Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy. MICROELECTRONICS RELIABILITY. 2016. 64. 566-569
-
Takahito Kojima, Shinsuke Harada, Yusuke Kobayashi, Mitsuru Sometani, Keiko Ariyoshi, Junji Senzaki, Manabu Takei, Yasunori Tanaka, Hajime Okumura. Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET. JAPANESE JOURNAL OF APPLIED PHYSICS. 2016. 55. 4
-
Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi, Takahito Kojima, Junji Senzaki, Yasunori Tanaka, Hajime Okumura. 3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field. IEEE ELECTRON DEVICE LETTERS. 2016. 37. 3. 314-316
ｍore...
MISC (17)：
-
Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura. Effects of interface state density on 4H-SiC n-channel field-effect mobility (vol 104, 083516, 2014). APPLIED PHYSICS LETTERS. 2015. 106. 10
-
SENZAKI Junji, SHIMOZATO Atsushi, TANAKA Yasunori, OKUMURA Hajime. Challenges of high-reliability in SiC-MOS gate structures. Technical report of IEICE. SDM. 2013. 113. 87. 81-86
-
矢野 浩司, 八尾 勉, 田中 保宣. SiC埋め込みゲートSITのチャネル設計の検討 (第20回 SIデバイスシンポジウム講演論文集). SIデバイスシンポジウム講演論文集. 2007. 20. 29-34
-
Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga. 700-V 1.0-m Omega center dot cm(2) buried gate SiC-SIT (SiC-BGSIT). IEEE ELECTRON DEVICE LETTERS. 2006. 27. 11. 908-910
-
TANAKA Yasunori, TAKATSUKA Akio, OKAMOTO Mitsuo, ARAI Kazuo, YATSUO Tsutomu, YANO Koji. Design and Fabrication of Buried Gate type SiC-SIT(BGSIT). 2006. 2006. 47. 89-93
ｍore...
Return to Previous Page
