700-V 1.0mΩ cm<sup>2</sup> Buried Gate SiC-SIT (SiC-BGSIT)

TANAKA Yasunori; OKAMOTO Mitsuo; TAKATSUKA Akio; ARAI Kazuo; YATSUO Tsutomu; YANO Koji; KASUGA Masanobu

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J-GLOBAL ID：200902239430745500 Reference number：06A0954427

700-V 1.0mΩ cm² Buried Gate SiC-SIT (SiC-BGSIT)

700V 1.0mΩ・cm²埋め込みゲートSiC-SIT(SiC-BGSIT)

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Author (7)： , , , , , ,
Material：
Volume： 27 Issue： 11 Page： 908-910 Publication year： Nov. 2006
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Semiconductor-semiconductor contacts without Gr.13-15 element compounds

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700-V 1.0mΩ cm2 Buried Gate SiC-SIT (SiC-BGSIT)

700-V 1.0mΩ cm² Buried Gate SiC-SIT (SiC-BGSIT)