Research field (2):
Electronic devices and equipment
, Electric/electronic material engineering
Research theme for competitive and other funds (7):
2022 - 2025 PN接合の内蔵電位を考慮した少数キャリア再結合速度の解析
2016 - 2018 マイクロ波急速加熱による薄膜シリコン結晶形成技術の開発
2013 - 2016 study on high efficiency solar cell driven by metal workfunction
2011 - 2013 結晶シリコンソーラーセルの水蒸気熱処理による特性改善機構の解明
2010 - 2012 Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers
1996 - 1997 Development and Application of Bule Light-Emitting Nanocrystalline Si Materials
1996 - 1996 シングルエレクトロニクス実現への実験的検証・基本単電子ユニット接合系の挙動
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Papers (107):
Hiromasa Shimizu, Kota Shinohara, Masahiko Hasumi. Improvement of photothermal heating efficiency of Si plasmonic waveguide heaters with ring resonators. Japanese Journal of Applied Physics. 2024. 63. 5. 052004-052004
Masahiko Hasumi, Toshiyuki Sameshima, Tomohisa Mizuno. Passivation of cut edges of crystalline silicon by heat treatment in liquid water. Japanese Journal of Applied Physics. 2023. 62. SK. SK1022-SK1022
Nana Ota, Kota Shinohara, Masahiko Hasumi, Hiromasa Shimizu. Quantification of 288 K local photothermal heating and miniaturization in Si plasmonic waveguides integrated with resonators. Japanese Journal of Applied Physics. 2023. 62. 4. 042002-042002
宮崎智由, 宮崎智由, 鮫島俊之, 齋藤宗平, 小野寺航, 上原琢磨, 有馬卓司, 蓮見真彦, 小林剛, 芹澤和泉, et al. Activation of Phosphorus Implanted Silicon Substrate with a Diameter of 300 mm by a Heating System using a Wireless Lamp as the Heat Source. 電子情報通信学会論文誌 C(Web). 2023. J106-C. 1
Masahiko Hasumi, Toshiyuki Sameshima, Ryota Seki, Takuma Uehara, Takuji Arima, Tomoyoshi Miyazaki, Go Kobayashi, Izumi Serizawa. Activation of Dopant Atoms in Silicon by Microwave-Induced Rapid Heating with Wireless Carbon Heating Tubes. Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. 2020. 409-410
Toshiyuki Sameshima, Masahiko Hasumi, Tomohisa Mizuno. Non-Destructive 9.35GHz Microwave Sensing System for Investigating Electrical Properties of Silicon. Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. 2020. 407-408
T. Sameshima, M.Shimokawa, J.Takenezawa, T.Nagao M.Hasumi, S.Yoshidomi, N.Sano, T.Mizuno. Analysis of Microwave Absorption by Photo-Induced Carriers at PN Junction Formed by Ion Implantation. Proceedings of 6th Thin Film Materials and Devices Meeting. 2010. 100228115. 1-6
Fabrication of Polycrystalline Silicon Thin Films at 300oC Using Dehydrogenation by Argon Ion Implantation
(The 24th International Meeting on Information Display 2024)
Excimer-Laser-Induced Crystallization of Amorphous Silicon Films deposited at 300oC Using Dehydrogenation by Argon Ion Implantation at 25 and 300oC
(THE 31st INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES 2024)