Art
J-GLOBAL ID：200902002089979689   Reference number：88A0556786

Properties of high temperature PCVD SiCX/Si hetero junction.

HT-PCVD SiCx/Siのヘテロ接合特性
Author (3)：
KUWAGAKI MAMORU

About KUWAGAKI MAMORU

(NTT LSI研)

About NTT LSI研

, 
OGINO TOSHIRO

About OGINO TOSHIRO

(NTT LSI研)

About NTT LSI研

, 
IMAI KAZUO

About IMAI KAZUO

(NTT LSI研)

About NTT LSI研


Material：
電子情報通信学会全国大会講演論文集  (電子情報通信学会秋季全国大会講演論文集)

About 電子情報通信学会全国大会講演論文集


Volume： 1988  Issue： Autumn Pt. C-2  Page： C.2.62  Publication year： Aug. 1988 
JST Material Number： G0508A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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plasma CVD

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

,  Transistors 
(NC03070N)

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Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
HT

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, 
Si

About Si

, 
ヘテロ接合

About ヘテロ接合


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