Three-dimensional effects of latchup turn-on CMOS and forward-biased n<sup>+</sup>-diode measured by photoemission.

OHZONE T; IWATA H

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J-GLOBAL ID：200902004707036955 Reference number：92A0623600

Three-dimensional effects of latchup turn-on CMOS and forward-biased n⁺-diode measured by photoemission.

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Author (2)： ,
Material：
Volume： 1992 Page： 115-120 Publication year： 1992
JST Material Number： T0991A Document type： Proceedings
Country of issue： United States (USA) Language： ENGLISH (EN)

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Three-dimensional effects of latchup turn-on CMOS and forward-biased n+-diode measured by photoemission.

Three-dimensional effects of latchup turn-on CMOS and forward-biased n⁺-diode measured by photoemission.