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J-GLOBAL ID：200902014722952203   Reference number：88A0455580

A stochastic model for dielectric breakdown in thin capacitors.

薄いコンデンサの絶縁破壊に対する確率モデル
Author (2)：
WILLMING D A

About WILLMING D A

(Univ. Illinois at Urbana-Champaign, IL, USA)

About Univ. Illinois at Urbana-Champaign, IL, USA

, 
WU C H

About WU C H

(Univ. Missouri-Rolla, MO, USA)

About Univ. Missouri-Rolla, MO, USA


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 63  Issue： 2  Page： 456-459  Publication year： Jan. 15, 1988 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOS structure

About MOS structure

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Dielectrics in general 
(BM05010F)

About Dielectrics in general

,  金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

Terms in the title (3)：
Terms in the title
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コンデンサ

About コンデンサ

, 
絶縁破壊

About 絶縁破壊

, 
確率モデル

About 確率モデル


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