Art
J-GLOBAL ID：200902019328225721   Reference number：92A0332109

Improvement of breakdown voltage characteristics of GaAs junction by damage-creation of ion-implantation.

イオン注入の損傷発生によるGaAs接合の降伏電圧特性の改良
Author (4)：
SHIMAMOTO Y

About SHIMAMOTO Y

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN

, 
TANAKA T

About TANAKA T

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN

, 
ITAKURA K

About ITAKURA K

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN

, 
UEDA D

About UEDA D

(Matsushita Electronics Corp., Osaka, JPN)

About Matsushita Electronics Corp., Osaka, JPN


Material：
Institute of Physics Conference Series  (Inst Phys Conf Ser)

About Institute of Physics Conference Series


Issue： 120  Page： 199-202  Publication year： 1992 
JST Material Number： E0403B  ISSN： 0305-2346  CODEN： IPHSAC  Document type： Proceedings
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
gallium arsenide

About gallium arsenide

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=92A0332109&from=J-GLOBAL&jstjournalNo=E0403B") }}
JST classification (2)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

,  半導体-金属接触【’81~’92】 
(BM03073E)

About 半導体-金属接触【’81~’92】

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
イオン注入

About イオン注入

, 
損傷

About 損傷

, 
GaAs

About GaAs

, 
降伏

About 降伏

, 
電圧特性

About 電圧特性


Return to Previous Page

TOP

BOTTOM