Art
J-GLOBAL ID：200902024545574320   Reference number：87A0281950

Lattice relaxation of InAs heteroepitaxy on GaAs.

GaAs上にヘテロエピタクシーで成長したInAs層の格子緩和
Author (4)：
MUNEKATA H

About MUNEKATA H

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA

, 
CHANG L L

About CHANG L L

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA

, 
WORONICK S C

About WORONICK S C

(State Univ. New York at Stony Brook, NY, USA)

About State Univ. New York at Stony Brook, NY, USA

, 
KAO Y H

About KAO Y H

(State Univ. New York at Stony Brook, NY, USA)

About State Univ. New York at Stony Brook, NY, USA


Material：
Journal of Crystal Growth  (J Cryst Growth)

About Journal of Crystal Growth


Volume： 81  Issue： 1/4  Page： 237-242  Publication year： Feb. 02, 1987 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium arsenide

About gallium arsenide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
ヘテロエピタクシー

About ヘテロエピタクシー

, 
成長

About 成長

, 
InAs

About InAs

, 
格子緩和

About 格子緩和


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