Art
J-GLOBAL ID：200902033716416540   Reference number：92A0654283

Transmutation doping of semiconductors by charged particles. (Review).

荷電粒子による半導体の変換ドーピング レビュー
Author (3)：
KOZLOVSKII V V

About KOZLOVSKII V V

(State Technical Univ., St. Petersburg)

About State Technical Univ., St. Petersburg

, 
ZAKHARENKOV L F

About ZAKHARENKOV L F

(State Technical Univ., St. Petersburg)

About State Technical Univ., St. Petersburg

, 
SHUSTROV B A

About SHUSTROV B A

(State Technical Univ., St. Petersburg)

About State Technical Univ., St. Petersburg


Material：
Soviet Physics. Semiconductors  (Sov Phys Semicond)

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Volume： 26  Issue： 1  Page： 1-11  Publication year： Jan. 1992 
JST Material Number： T0093A  ISSN： 0038-5700  CODEN： SPSEAX  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium arsenide

About gallium arsenide

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

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Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
荷電粒子

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, 
ドーピング

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, 
レビュー

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