Art
J-GLOBAL ID：200902038279292820   Reference number：90A0243481

Power semiconductor device figure of merit for high-frequency applications.

電力半導体素子の高周波用としての性能指数
Author (1)：
BALIGA B J

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(North Carolina State Univ., NC)

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Material：
IEEE Electron Device Letters  (IEEE Electron Device Lett)

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Volume： 10  Issue： 10  Page： 455-457  Publication year： Oct. 1989 
JST Material Number： B0344B  ISSN： 0741-3106  CODEN： EDLEDZ  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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MOSFET

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

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Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
電力半導体素子

About 電力半導体素子

, 
高周波

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, 
性能指数

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