Art
J-GLOBAL ID：200902040349003205   Reference number：92A0119098

GaN Growth Using GaN Buffer Layer.

GaNバッファ層を使うGaNの成長
Author (1)：
NAKAMURA S

About NAKAMURA S

(Nichia Chemical Industries, Ltd., Tokushima)

About Nichia Chemical Industries, Ltd., Tokushima


Material：
Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)

About Japanese Journal of Applied Physics. Part 2. Letters


Volume： 30  Issue： 10A  Page： L1705-L1707  Publication year： Oct. 01, 1991 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
バッファ層

About バッファ層

, 
成長

About 成長


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