Art
J-GLOBAL ID：200902040940573991   Reference number：90A0487351

Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

Si(100)上のGeの転位のないStranski-Krastanov成長
Author (2)：
EAGLESHAM D J

About EAGLESHAM D J

(AT&T Bell Lab., New Jersey)

About AT&T Bell Lab., New Jersey

, 
CERULLO M

About CERULLO M

(AT&T Bell Lab., New Jersey)

About AT&T Bell Lab., New Jersey


Material：
Physical Review Letters  (Phys Rev Lett)

About Physical Review Letters


Volume： 64  Issue： 16  Page： 1943-1946  Publication year： Apr. 16, 1990 
JST Material Number： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MBE growth

About MBE growth

,...
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crytical thickness

About crytical thickness


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
Ge

About Ge

, 
転位

About 転位

, 
Stranski-Krastanov成長

About Stranski-Krastanov成長


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