Cryogenic reactive ion etching of silicon in SF<sub>6</sub>.

BESTWICK T D; OEHRLEIN G S; ANGELL D

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J-GLOBAL ID：200902043557748663 Reference number：90A0765001

Cryogenic reactive ion etching of silicon in SF₆.

SF₆中におけるSiの低温反応性イオンエッチング

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Author (3)： , ,
Material：
Volume： 57 Issue： 5 Page： 431-433 Publication year： Jul. 30, 1990
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices , Applications of plasma

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Cryogenic reactive ion etching of silicon in SF6.

Cryogenic reactive ion etching of silicon in SF₆.