Art
J-GLOBAL ID：200902048495000049
Reference number：88A0174044
Interpretation of transient capacitance spectra for EL2.
GaAs中の深い準位EL2をめぐって キャパシタンス法による「EL2」の測定と結果の解釈
Author (1)：
Material：
Volume：
57
Issue：
1
Page：
92-96
Publication year：
Jan. 1988
JST Material Number：
F0252A
ISSN：
0369-8009
CODEN：
OYBSA
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electronic structure of impurites and defects
, 半導体-金属接触【’81~’92】
Reference (14)：
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1) A. Yahata and M. Nakajima: Jpn. J. Appl. Phys. 23 (1984) L 313.
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2) F. Hasegawa, C. Mogi, M. Onomura and Y. Nannichi: Proc. 4th Conf. Semi-Insulating 1986) p. 409.
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3) T. Okumura and M. Hoshino: Proc. 4th Conf. Semi-Insulating III-V Materials (オーム社, 1986) p. 409
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4) A. Yahata, H. Okushi and K. Ishida: Proc. 4th Conf. Semi-Insulating III-V Materials (オーム社, 1986) p. 415.
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5) T. Okumura and M. Hoshino: Jpn. J. Appl. Phys. 25 (1986) L 548.
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