Okumura Tsugunori

• 1999 - 2003 極薄シリコン層の非接触電気特性評価
• 1999 - 2003 Contactless Electrical Characterization of Ultrathin Silicon Layers
• 1993 - 半導体におけるプロセス誘起欠陥発生とデバイスの信頼性
• 1993 - Process-Induced Defect Formation and Relaiblity Issues in Semiconductor Devices
• 1981 - ショットキー接触の形成と界面の微視的評価
1981 - Formation and Microscopic Characterization of Schottky Contacts
1973 - 半導体結晶・デバイス中の不純物と欠陥の評価
1973 - Characterization of Crystalline Defects in Semiconductor Materials and Devices
化合物半導体電子デバイスの高性能化・高信頼性化のための基礎的アプローチ
半導体評価技術
Material and Process Issues on Performance and Reliablity of Compound Semiconductor Devices
Characterization of Semiconductor Devices and Related Materials

• Takuma Takimoto, Koji Takeshita, Seiji Nakamura, Tsugunori Okumura. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing. THIN SOLID FILMS. 2014. 557. 212-215
• Seiji Nakamura, Koichi Hoshino, Yuki Ikadai, Masayuki Suda, Tsugunori Okumura. Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation. JAPANESE JOURNAL OF APPLIED PHYSICS. 2013. 52. 8. 088001-088003
• Seiji Nakamura, Noriyuki Takahashi, Tsugunori Okumura. Detection of ppm-order hydrogen gas by Pd/AlGaN/GaN high electron mobility transistor-based sensors. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2. 2009. 6. S1053-S1055
• Shiro Kamohara, Chenming Hu, Tsugunori Okumura. Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides. JAPANESE JOURNAL OF APPLIED PHYSICS. 2008. 47. 8. 6208-6213
• Shiro Kamohara, Katsuhiko Kubota, Masahiro Moniwa, Tsugunori Okumura. Statistical p-n junction leakage model via trap level fluctuation for refresh-time-oriented dynamic random access memory design. JAPANESE JOURNAL OF APPLIED PHYSICS. 2008. 47. 7. 5304-5308

ｍore...

• OKUMURA Tsugunori. Doping in semiconductors. OYOBUTURI. 1999. 68. 9. 1054-1059
• シリコン結晶中のFe-B対およびAuのDLTS評価:ラウンドロビン測定の結課. 電子工業月報. 1996. 406. 48
• Okumura Tsugunori. Microscopic Characterization of Schottky Barrier Height by Scanning Internal-Photoemission Microscopy. Bulletin of the Japan Institute of Metals. 1995. 34. 7. 883-888
• 走査型内部光電子放出顕微境. 表面技術. 1991. 42. 2. 215
• キャパシタンス法による「EL2」の測定と結果の解釈. 応用物理. 1988. 57. 1

• Electronic Properties of Materials
  Corona Pub. Co. Ltd. 2013 ISBN:9784339018509
• 電子材料ハンドブック
  朝倉書店 2006 ISBN:4254221517
• 電気電子材料 -基礎から試験法まで-
  電気学会(オーム社) 2006 ISBN:4886862527
• 高周波半導体材料・デバイスの新展開
  シーエムシー出版 2006 ISBN:4882315823
• Formation of Semiconductor Interfaces
  Elsevier 2002

ｍore...

• Defects formation in III-Nitride dry process, compared with other conventional III-V
  (2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2010)
• Defects formation in III-Nitride dry process, compared with other conventional III-V
  (2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 2010)
• Noncontact Characterization of Thin SOI Materials by the Kelvin-probe Method
  (The 8th International Conference on the Formation of Semiconductor Interfaces 2001)
• Contactless characterization of surface and interface band-bending in silicon-on-insulator (SOI) structures
  (The 9th International Conference on Defects : Recognition, Imaging and Defects in Semiconductors (DRIP-IX), Italy 2001)
• Noncontact Characterization of Thin SOI Materials by the Kelvin-probe Method
  (The 8th International Conference on the Formation of Semiconductor Interfaces 2001)

ｍore...

• Electrical characterization of poly-Si thin films
  2002 - 現在
• 化合物半導体のプロセスダメージの評価
  1995 - 現在
• Characterization technique of compound semiconductors for optoelectronic devices
  1995 - 現在
• Reliability Physics of Semiconductor Devices
  1995 - 現在
• デバイス高信頼化の研究
  1995 - 2010

ｍore...

• 1973 - 1978 The University of Tokyo Graduate School of Engineering Electrronics
• 1969 - 1973 Kyoto University School of Engineering Electronics

• Doctor (Engineering) (The University of Tokyo)

• 2016/04 - 現在 Tokyo Metropolitan Industrial Technology Research Institute President
• 2011/04 - 2016/03 Tokyo Metropolitan University Vice President
• 2009/04 - 2012/03 Faculty of Urban Liberal Arts, Tokyo Metropolitan University. Prof./Dean
• 2006/04 - 2009/03 同上 大学院理工学研究科長
• 2006/04 - 2009/03 Prof./Dean, Graduate School of Science & Engineering, Tokyo Metropolitan University.
2005/04 - 2009/03 Tokyo Metropolitan University
1989/04 - 2005/03 Faculty of Engineering, Tokyo Metropolitan University Professor
1978/04 - 1989/03 Faculty of Engineering, Tokyo Metropolitan University Associate Professor
1981/07 - 1982/07 IBM Watson Research Center. Visiting Scientist

• 2013/05 - 現在 (独)新エネルギー・産業技術総合開発機構(NEDO) 技術委員
• 2011/05 - 現在 (独)日本学術振興会 博士課程教育リーディングプログラム委員会
• 2008/06 - 現在 (社)首都圏産業活性化協会 会長(2014.6から)
• 2008/04 - 現在 (独)大学評価・学位授与機構 学位審査会 専門委員
• 2006/10 - 現在 日本学術会議 連携会員 (総合工学委員会)
2006 - 現在 Associate Member of The Science Council of Japan
1997/04 - 現在 (独)日本学術振興会 結晶加工と評価技術 第145委員会(現在 運営委員・幹事)
1993/04 - 現在 (独)日本学術振興会 半導体界面制御技術 第154委員会(現在 副委員長)
2009/05 - 2011/03 (独)日本学術振興会 特別研究員等審査会委員
2008/03 - 2010/03 (社)応用物理学会 副会長(会長特別補佐)
2008 - 2010 The Japan Society of Applied Physics Vice President, Executive Director, Boad Member, Division Chief
2003 - 2006 The Institute of Eletrical Engineers in Japan Chair of Technical Committee of Electronic Materials
2003/01 - 2004/09 (独)日本学術振興会 科学研究費委員会専門委員
2002/05 - 2004/03 新エネルギー・産業技術総合開発機構(NEDO) 技術委員
2002 - 2004 Technical Committee Member of NEDO
2001/03 - 2003/03 (社)応用物理学会 理事
1999/07 - 2000/03 (財)大学基準協会 工学系専門審査分科会委員
電気学会 電子材料技術委員会委員長、調査専門委員会委員長
電子情報通信学会 査読委員
応用物理学会 副会長、理事、評議員、分科会幹事長

• 2007 - 応用物理学会フェロー表彰
• 2007 - Fellow Award (Japan Society of Applied Physics)

米国電気電子学会(IEEE) ,  日本結晶成長学会 ,  電気学会 ,  電子情報通信学会 ,  応用物理学会 ,  Materials Research Society ,  The Institute of Electrical and Electronics Engineers ,  The Japanese Association for Crystal Growth ,  The Institute of Eletrical Engineers in Japan ,  Information and Communucation Engineers ,  The Institute of Electronics ,  The Japan Society of Applied Physics