Art
J-GLOBAL ID：200902048820752605   Reference number：90A0052131

Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas system.

SiH2Cl2/C3H8/H2/HClガス系による低温からのSi上β-SiCの選択成長
Author (2)：
OHSHITA Y

About OHSHITA Y

(NEC Corp., Kawasaki, JPN)

About NEC Corp., Kawasaki, JPN

, 
ISHITANI A

About ISHITANI A

(NEC Corp., Kawasaki, JPN)

About NEC Corp., Kawasaki, JPN


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 66  Issue： 9  Page： 4535-4537  Publication year： Nov. 01, 1989 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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chemical vapor deposition

About chemical vapor deposition

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
propane

About propane


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
SiH2Cl2

About SiH2Cl2

, 
H2

About H2

, 
HClガス

About HClガス

, 
低温

About 低温

, 
Si

About Si

, 
SiC

About SiC

, 
選択成長

About 選択成長


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