Art
J-GLOBAL ID：200902053997455779   Reference number：89A0084028

High-field-induced degradation in ultra-thin SiO2 films.

超薄SiO2膜の高電界による劣化
Author (3)：
OLIVO P

About OLIVO P

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA

, 
NGUYEN T N

About NGUYEN T N

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA

, 
RICCO B

About RICCO B

(Univ. Bologna, Bologna, ITA)

About Univ. Bologna, Bologna, ITA


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 35  Issue： 12  Page： 2259-2267  Publication year： Dec. 1988 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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VLSI

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,...
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JST classification (1)：
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Measurement,testing and reliability of solid-state devices 
(NC03040G)

About Measurement,testing and reliability of solid-state devices

Terms in the title (2)：
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SiO2

About SiO2

, 
高電界

About 高電界


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