Art
J-GLOBAL ID：200902055369220021   Reference number：82A0094873

Assessment by in situ ellipsometry of composition profiles of Ga1-xAlxAs-GaAs heterostructures.

Ga1-xAlxAs-GaAsヘテロ構造の組成プロフィルのin situエリプリメトリーによる評価
Author (2)：
HOTTIER F

About HOTTIER F

(Lab. Electronique et de Physique Appliqu<span style=text-decoration:overline>e ́</span>e, France)

About Lab. Electronique et de Physique Appliqu<span style=text-decoration:overline>e ́</span>e, France

, 
LAURENCE G

About LAURENCE G

(Lab. Electronique et de Physique Appliqu<span style=text-decoration:overline>e ́</span>e, France)

About Lab. Electronique et de Physique Appliqu<span style=text-decoration:overline>e ́</span>e, France


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 38  Issue： 11  Page： 863-865  Publication year： Jun. 01, 1981 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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gallium arsenide

About gallium arsenide

,...
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JST classification (1)：
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Semiconductor thin films 
(BK14040E)

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Terms in the title (5)：
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GaAs

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, 
ヘテロ構造

About ヘテロ構造

, 
組成

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, 
プロフィル

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, 
評価

About 評価


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