Art
J-GLOBAL ID:200902056613269026   Reference number:90A0720999

Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment.

斜め酸素衝撃にさらしたシリコンの二次イオン収量とエロージョン速度に対する表面粗さの効果
Author (1):
Material:
Volume:Issue: 3 Pt.2  Page: 2246-2250  Publication year: May. 1990 
JST Material Number: C0789B  ISSN: 0734-2101  CODEN: JVTAD6  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=90A0720999&from=J-GLOBAL&jstjournalNo=C0789B") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 

Return to Previous Page