Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD.

AKIYAMA M; KAWARADA Y; KAMINISHI K

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J-GLOBAL ID：200902060197114899 Reference number：85A0200061

Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD.

MOCVD法による(100)配向Si基板上での単一ドメインGaAs層の成長

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Author (3)： , ,
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Volume： 23 Issue： 11 Page： L843-L845 Publication year： Nov. 1984
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films

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