Art
J-GLOBAL ID：200902060882814836   Reference number：86A0405469

CVD in stagnation point flow. An evaluation of the classical 1D treatment.

よどみ点フロー中のCVD 旧来の1D取扱いの評価
Author (3)：
HOUTMAN C

About HOUTMAN C

(Univ. Minnesota)

About Univ. Minnesota

, 
GRAVES D B

About GRAVES D B

(Univ. Minnesota)

About Univ. Minnesota

, 
JENSEN K F

About JENSEN K F

(Univ. Minnesota)

About Univ. Minnesota


Material：
Journal of the Electrochemical Society  (J Electrochem Soc)

About Journal of the Electrochemical Society


Volume： 133  Issue： 5  Page： 961-970  Publication year： May. 1986 
JST Material Number： C0285A  ISSN： 1945-7111  CODEN： JESOAN  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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chemical vapor deposition

About chemical vapor deposition

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
pressure dependence

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JST classification (1)：
JST classification
Category name(code) classified by JST.
Thin films in general 
(BK14010X)

About Thin films in general

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
よどみ点

About よどみ点

, 
フロー

About フロー

, 
CVD

About CVD

, 
1D

About 1D

, 
取扱い

About 取扱い

, 
評価

About 評価


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