Alternate Surface Cleaning Approaches for Ultra High Vacuum Chemical Vapor Deposition Epitaxy of Si and Ge<sub>x</sub>Si<sub>1-x</sub>.

RACANELLI M; GREVE D W; HATALIS M K; VAN YZENDOORN L J

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J-GLOBAL ID：200902062951666162 Reference number：92A0089672

Alternate Surface Cleaning Approaches for Ultra High Vacuum Chemical Vapor Deposition Epitaxy of Si and Ge_xSi_1-x.

SIおよびGe_xSi_1-xの超高真空化学蒸着エピタクシーに対する代替表面クリーニング法

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Material：
Volume： 138 Issue： 12 Page： 3783-3789 Publication year： Dec. 1991
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Manufacturing technology of solid-state devices

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Alternate Surface Cleaning Approaches for Ultra High Vacuum Chemical Vapor Deposition Epitaxy of Si and GexSi1-x.

Alternate Surface Cleaning Approaches for Ultra High Vacuum Chemical Vapor Deposition Epitaxy of Si and Ge_xSi_1-x.