Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620nm spectral region using a thick GaP window layer.

HUANG K H; YU J G; KUO C P; FLETCHER R M; OSENTOWSKI T D; STINSON L J; CRAFORD M G; LIAO A S H

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J-GLOBAL ID：200902063880924609 Reference number：92A0738102

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620nm spectral region using a thick GaP window layer.

厚いGaPウインドー層を使った555-620nmのスペクトル範囲における高性能AlGaInP発光ダイオードの二倍の効率改善

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Material：
Volume： 61 Issue： 9 Page： 1045-1047 Publication year： Aug. 31, 1992
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Light emitting devices

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