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J-GLOBAL ID:200902065694809339   Reference number:90A0157611

Model of plasma immersion ion implantation.

プラズマ浸漬イオン注入のモデル
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Volume: 66  Issue:Page: 2926-2929  Publication year: Oct. 01, 1989 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Irradiational changes semiconductors 
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