Art
J-GLOBAL ID:200902067311109323   Reference number:86A0349445

Temperature distribution of silicon-on-insulator systems during recrystallization processing.

再結晶過程での絶縁体上シリコン系の温度分布
Author (2):
Material:
Volume: 59  Issue:Page: 1663-1666  Publication year: Mar. 01, 1986 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=86A0349445&from=J-GLOBAL&jstjournalNo=C0266A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Manufacturing technology of solid-state devices 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page