Art
J-GLOBAL ID：200902067502137785
Reference number：86A0245124
Point-defect generation during oxidation of silicon in dry oxygen. I Theory.
乾燥酸素中のシリコン酸化の際の点欠陥生成 I 理論
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=86A0245124©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=86A0245124&from=J-GLOBAL&jstjournalNo=C0266A") }}
Author (2)：
,
Material：
Volume：
59
Issue：
7
Page：
2541-2550
Publication year：
Apr. 01, 1986
JST Material Number：
C0266A
ISSN：
0021-8979
CODEN：
JAPIAU
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page
