Study of silicon contamination and near-surface damage caused by CF<sub>4</sub>/H<sub>2</sub> reactive ion etching.

OEHRLEIN G S; TROMP R M; LEE Y H; PETRILLO E J

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J-GLOBAL ID：200902070152081596 Reference number：85A0234247

Study of silicon contamination and near-surface damage caused by CF₄/H₂ reactive ion etching.

CF₄/H₂反応性イオンエッチングによるシリコンの汚染と表面近傍損傷に関する研究

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Author (4)： , , ,
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Volume： 45 Issue： 4 Page： 420-422 Publication year： Aug. 15, 1984
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Surface structure of semiconductors

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Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching.

Study of silicon contamination and near-surface damage caused by CF₄/H₂ reactive ion etching.