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J-GLOBAL ID：200902077039694551   Reference number：87A0515017

Silicon etching mechanisms in a CF4/H2 glow discharge.

CF4/H2グロー放電におけるシリコンのエッチング機構
Author (2)：
OEHRLEIN G S

About OEHRLEIN G S

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA

, 
WILLIAMS H L

About WILLIAMS H L

(IBM Thomas J. Watson Research Center, NY, USA)

About IBM Thomas J. Watson Research Center, NY, USA


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 62  Issue： 2  Page： 662-672  Publication year： Jul. 15, 1987 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Hydrogen

About Hydrogen

,...
Semi thesaurus term：
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carbon tetrafluoride

About carbon tetrafluoride


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JST classification (1)：
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Techniques for samples 
(BA02070O)

About Techniques for samples

Terms in the title (4)：
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H2

About H2

, 
グロー放電

About グロー放電

, 
シリコン

About シリコン

, 
エッチング

About エッチング


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